Dynamics of silicon oxidation

Materials Research Society Symposium - Proceedings

Volumn 592, Issue , 2000, Pages 3-14

  Stoneham, A M ^a   Szymanski, M A ^a   Shluger, A L ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; DIFFUSION; GROWTH (MATERIALS); INTERFACES (MATERIALS); ISOTOPES; MONTE CARLO METHODS; OXIDATION; PROBABILITY DENSITY FUNCTION; SILICA;

GENERALIZED GRADIENT APPROXIMATION CALCULATIONS; INTERSTITIAL DIFFUSION;

SEMICONDUCTING SILICON;

EID: 0034500551     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (47)

1. T. Hori, Gate Dielectrics and MOS ULSIs Springer, Berlin, (1997).
2. W.H. Krautschneider, A. Kohlhase, and H. Terletzki, Microelectron. Reliab. 37, (1997), p. 19-37.
3. CJ. Sofield and A.M. Stoneham, Semic. Sci. Tech. 10, (1995), p. 215-240.
4. A.M. Stoneham and C.J. Sofield, Fundamental Aspects of Ultrathin Dielectrics in Si based devices: Towards an Atomic Understanding (edited E. Garfunkel, E. Gusev, A Vul'; Kluwer 1998), p. 79-88.
5. CJ. Sofield and A.M. Stoneham, Semicond. Sci. Tech 10, (1995), p. 215-244.
6. B.E. Deal and A.S. Grove, J. Appl. Phys. 36, (1965), p. 3770-3778.
7. A.M. Stoneham, "Oxidation kinetics" Encyclopaedia of Materials, (2000), in press.
8. A.M. Stoneham and P.W. Tasker, Phil. Mag. B55, (1987), p. 237-252.
9. P. Collot, G. Gautherin, B. Agius, S. Rigo and F. Rochet, Phil. Mag., B52, (1985), p. 1051.
10. E.A. Irene and E.A. Lewis, Appl. Phys. Lett. 51, (1987), p. 767.
11. A.M. Stoneham, C.R.M. Grovenor and A. Cerezo, Phil. Mag. B55, (1987), p. 201-210.
12. C.K. Ong, A.M. Stoneham and A.H. Harker, Interface Science 1, (1993), p. 139-146.
13. A. Stesmans, Phys. Rev. Lett. 70, (1993), p. 1723-1726.
14. D. Hamann, Phys. Rev. Lett. 81, (1998), p.3447-3450.
15. N.F. Mott, S. Rigo, F. Rochet and A.M. Stoneham, Phil. Mag. B60, (1989), p. 189-212.
16. X. Zhang, C.K. Ong and A.M. Stoneham, J. Phys. Cond. Mat. 6, (1994), p. 5647
17. D.R. Welters and A.T.A. Zegers-van Duijnhoven, J. Electrochem. Soc. 139, (1992), p. 241-249.
18. D.R. Wolters and A.T.A. Zegers-van Duijnhoven, Microelectronics Journal 24, (1993), p. 333.
19. Jiazhan Xu, W.J. Choyke and John T. Yates, Jr., J. Appl. Phys. 82, (1997), p. 6289.
20. C. Martinet, R.A.B. Devine and M.Brunel, J. Appl. Phys. 81, (1997), p. 6996.
21. N.Shamir, J.M. Mihaychuk and H.M. van Driel, Phys. Rev. Lett. 82, (1999), p. 359.
22. M.J. Kirton and M.J. Uren, Adv. in Phys. 38, (1989), p. 367.
23. J.P. Perdew, in Electronic Structure in Solids, edited by P. Zeische and H. Eschrig (Academic Verlag, Berlin 1991).
24. J.P. Perdew, J.A. Chevary, S.H. Vosko, K.A. Jackson, M.R. Pederson and C. Fiolhais, Phys. Rev. B. 46, (1992), p. 6671.
25. G. Kresse and J. Furthmuller, Phys. Rev. B 54, (1996), p. 11169.
26. Kresse and J. Furthmuller, Comp. Mater. Sci. 6, (1996), p. 15.
27. V. Makov and M.C. Payne, Phys. Rev. B 51, (1995), p. 4014.
28. J.G. Mihaychuk, N. Shamir and H.M. van Driel, Phys. Rev. B 59, (1999), p. 2164-2173.
29. J.L. Alay and M. Hirose, J. Appl. Phys. 81, (1997), p. 1606-1608.
30. M.A. Szymanski, A.M. Stoneham and A.L. Shluger, (2000), to be published in special issue of Microelectronics Reliability (proceedings of the 1999 Barcelona conference).
31. V.J.B. Torres, A.M. Stoneham, C.J. Sofield, A.H. Harker, and C.F. Clement, Interface Science 3, (1995), p.131-144.
32. N. Cabrera and N.F. Mott, Rep. Pros- Phys. 12 ,(1948), p. 163-184.
33. N. Itoh and A.M. Stoneham, (1997) to appear in Structure and Imperfections in Amorphous and Crystalline SiO2 (R Devine, ed) J Wiley, New York.
34. X.D. Chen and J.M. Gibson, J. Vac. Sci. Tech. A17, (1999), p. 1269;
35. P.M. Ross and J.M. Gibson, Phys. Rev. Lett. 68, (1992), p. 1782-1785.
36. A.M. Stoneham, C.J. Sofield, A.H. Harker, M.A. Szymanski, A. Shluger (book article for KatayamaYoshida to appear in Physics and Control of Defects in Semiconductors)
37. M. Niwa, T. Kouzaki, K. Okada, M. Udagawa and R. Sinclair, Jap. J. Appl. Phys. 33, (1994), p. 388-394.
38. R. Degraeve, G. Groeseneken, R. Bellens, M. Depas and H.E. Macs, IEDM 95 (IEEE New York, 1995), p. 863-865.
39. See also M. Depas, T. Nigam, and M.M. Heyns, IEEE Trans Electron Devices 43, (1996), p.1499-1502.
40. DJ. DiMaria, E. Cartier and D.A. Buchanan, J. Appl. Phys. 80, (1996), p. 304-317.
41. D.R. Wolters, and A.T.A Zegers-van Duijnhoven, (1996), Phil Trans Roy Soc A354 2327-2350.
42. D J. DiMaria, Applied Physics Letters 68, (1996), p. 3004-3006.
43. P.E. Bloechl and J.Stathis, Phys. Rev. Lett. 83, (1999), p.372-375.
44. M.M. Heyns and A. von Schwerin, in Insulating Films on Semiconductors, edited by W. Eccleston and MJ. Uren, Institute of Physics Publishing, Bristol, UK., (1991)
45. S. Jeffrey, C J. Sofield and J.B. Pethica, Appl. Phys. Lett. 73, (1998), p. 172.
46. G. Deamaley, A.M. Stoneham and D.V. Morgan, Rep. Prog. Phys. 33, (1970), p. 1129-1192.
47. M. Depas, B. Vermeire and M.M. Heyns, J. Appl. Phys. 80, (1996), p. 382.