Tunnelling in thin SiO2

Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences

Volumn 354, Issue 1717, 1996, Pages 2327-2350

  Wolters, D R ^a   Zegers Van Duijnhoven, A T A ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3042929909     PISSN: 1364503X     EISSN: None     Source Type: Journal    
DOI: 10.1098/rsta.1996.0103     Document Type: Article

References (54)

1. 2 degradation with charge injection polarity. IEEE Electron. Devel. Lett. 14, 512-514.
2. Chao, K. C. & Chen, M. J. 1995 Fowler-Nordheim limited band-to-band tunnelling for P-MOSFET gate current in a floating bulk condition. Solid State Electron. 38, 135-137.
3. deKort, K., Damink, P. & Boots, H. 1993 Spectrum emitted by hot-electrons in p-i-n cold cathodes Phys. Rev. B 48, 11912-11920.
4. DiMaria, D., Dong, D., Falcony, C., Theis, T., Kirtley, J., Tsang, X., Young, D., Pesavento, F. & Brorson, S. 1983 Charge transport and trapping phenomena in off-stoichiometric silicon dioxide films. J. Appl. Phys. 54, 5801-5827.
5. Dumin, D. J., Mopuri, S. K., Vanchinathan, S., Scott, R. S., Subramoniam, R. & Lewis, T. G. 1995 High-field related thin oxide wearout and breakdown. In IEEE Trans. Electron. Devel. 42, 760-772.
6. Dumin, D. J., Vanchinathan, S., Mopuri, S. K. & Subramoniam, R. 1995 Evidence for nonuniform trap distribution in thin oxides after high-voltage stressing. J. Electr. Chem. Soc. 142, 2055-2059.
7. Elrharbi, S., Jourdain, M. & Meinertzhagen, A. 1994 Effect of the tunneling electrons in Fowler-Nordheim regime on the current voltage characteristics and model of degradation of metal-oxide-semiconductor capacitors. J. Appl. Phys. 76, 1013-1020.
8. Eitan, B. & Kolodny, A. 1983 Two components of tunneling currents in metal-oxide-silicon structures. Appl. Phys. Lett. 43, 106-108.
9. Faigon, A., Straboni, A., Miranda, E. & Redin, G. 1993 Tunneling in Al-silicon oxynitride structures. Thin Solid Films 230, 133-137.
10. 2: ballistic and steady state transport. Appl. Surf. Sci. 31, 375-389.
11. Fisschetti, M. V., Laux, S. E. & DiMaria, D. J. 1988 The physics of hot electron degradation of Si MOSFETs: can we understand it? Appl. Surf. Sci. 39, 578-596.
12. Fowler, R. H. & Nordheim, L. 1928 Electron emission in intense fields. Proc. R. Soc. Lond. A 119, 173-181.
13. Gundlach, K. H. 1966 Zur Berechnung des Tunnelstroms Durch eines Trapezeformige Potential Stufe. Solid State Electron. 9, 949-957.
14. 2. J. Appl. Phys. 49, 2478-2488.
15. Hegarty, C. J., Lee, J. C. & Hu, C. M. 1991 Enhanced conductivity and breakdown of oxides grown on heavily implanted substrates. Solid State Electron. 34, 1207-1213.
16. Hemink, G., Endoh, T. & Shirota, R. 1994 Modeling of the hole current caused by Fowler-Nordheim tunneling through thin oxides. Jap. J. Appl. Phys. 33, 546-549.
17. Jensen, K. L. 1995 Improved Fowler-Nordheim equation for field-emission from semiconductors J. Vac. Sci. Technol. B 13, 516-521.
18. Jensen, K. L. & Ganguly, A. K. 1993 Numerical-simulation of field-emission and tunneling - a comparison of the Wigner function and transmission coefficient approaches. J. Appl. Phys. 73, 4409-4427.
19. Kobayashi, K., Teramoto, A., Hirayama, M. & Fujita, Y. 1995 Model for the substrate hole current based on thermoionic hole emission from the anode during Fowler-Nordheim electron-tunneling in the N-channel metal-oxide-semiconductor field effect transistors. J. Appl. Phys. 77, 3277-3282.
20. Kong, S. O. & Kwok, C. Y. 1993 Fowler-Nordheim tunneling current in a Mg/polycrystalline Si oxide/N+ polycrystalline Si metal-oxide-silicon structure. Appl. Phys. Lett. 63, 2667-2669.
21. Ku, P. S. & Schroder, D. K. 1994 Charges trapped throughout the oxide and their impact on the Fowler-Nordheim current in MOS devices. IEEE Trans. Elec. Devel. 41, 1699-1672.
22. 2. J. Appl. Phys. 40, 278-282.
23. Lewicki, G. & Maserjian, J. 1975 Oscillations in MOS tunneling. J. Appl. Phys. 46, 3032-3039.
24. Mistry, K. & Doyle, B. 1995 How do hot carriers degrade N-channel MOSFETs. In IEEE Circ. Devel. Magazine 11, 28-33.
25. Oostrom, A. G. J. van 1965 Validity of the Fowler-Nordheim model for field electron emission. Thesis, Amsterdam.
26. Pan, Y. 1994 A physical-based analytical model for the hot-carrier-induced saturation current degradation of P-MOSFETs IEEE Trans. Elec. Devel. 41, 84-89.
27. 2 system treated with argon plasma. Semicond. Sci. Technol. 8, 1566-1570.
28. 2 interface morphology from quantum oscillations in Fowler-Nordheim tunneling currents. J. Vac. Sci. Technol. B 12 88-95.
29. Roh, Y., Trombetta, L. & Han, J. 1995 Analysis of charge components induced by Fowler-Nordheim tunnel injection in silicon-oxides prepared by rapid thermal oxidation. J. Electr. Chem. Soc. 142, 1015-1020.
30. Satake, H. & Toriumi, A. 1995. Temperature-dependent hole fluence to breakdown in thin gate oxides under Fowler-Nordheim electron-tunneling injection. Appl. Phys. Lett. 66, 3516-3517.
31. Schuegraf, K. F. & Hu, C. 1994 Metal-oxide-semiconnductor field-effect-transistor substrate current during Fowler-Nordheim tunneling stress and silicon dioxide reliability. J. Appl. Phys. 76, 3695-3700.
32. Simoen, E. & Claeys, C. 1995 Substrate current characteristics in partially depleted silicon-on-insulator N-MOSFETs from room temperature down to 4.2 K. Cryogenics 35, 321-326.
33. Uehara, Y., Watanabe, J., Fujikawa, S. & Ushioda, S. 1995 Light-emission mechanism of Si-MOS tunnel-junctions. Phys. Rev. B 51, 2229-2238.
34. Uraoka, Y., Tsutsu, N., Morii, T., Nakata, Y. & Esaki, H. 1993 Hot carrier evaluation of MOS-FETs in ULSI circuits using the photon emission method. IEEE Trans. Elec. Devel. 40, 1426-1431.
35. 2. Solid State Electron. 20, 11-18.
36. Weinberg, Z. A. 1982 On tunneling in metal-oxide-silicon structures. J. Appl. Phys. 53, 5052-5056.
37. 2. J. Appl. Phys. 54, 2517-2521.
38. 2-induced substrate current in silicon field effect transistors. J. Appl. Phys. 57,443-452.
39. 2-induced substrate current and its relation to positive charge in field-effect transistors. J. Appl. Phys. 59, 824-832.
40. 2. Springer series in Electrophysics (ed. M. Schulz & G. Pensl), vol. 7, pp. 180-194. Berlin: Springer.
41. 2. Springer Series in Electrophysics (ed. M. Schulz & G. Pensl), vol. 7, pp. 111-117. Berlin: Springer.
42. 2. J. Appl. Phys. 58, 831-837.
43. Wolters, D. R. & van der Schoot, J. J. 1985b Dielectric breakdown in MOS devices. I. Defect-related and intrinsic breakdown. Philips J. Res. 40, 115-137.
44. Wolters, D. R. & van der Schoot J. J. 1985c Dielectric breakdown in MOS devices. II. Conditions for intrinsic breakdown. Philips J. Res. 40, 137-163.
45. Wolters, D. R. & van der Schoot, J. J. 1985d Dielectric breakdown in MOS devices. III. The damage leading to breakdown. Philips J. Res. 40, 163-185.
46. Wolters, D. R. & Verweij, J. F. 1986a In Instabilities in silicon devices (ed. C. Barbottin & A. Vapaille), pp. 315-362. Amsterdam: North Holland.
47. Wolters, D. R. & van der Schoot, J. J. 1986b In Insulating films on semiconductors (ed. J. J. Simonne & J. Buxo), pp. 145-149. Amsterdam: North Holland.
48. Wolters, D. R. & Peek, H. L. 1987a Fowler-Nordheim tunneling in implanted MOS Devices. Solid State Electron. 30, 835-539.
49. 2 films. Appl. Surf. Sci. 31, 391-409.
50. Wolters, D. R. & Zegers-van Duijnhoven, A. T. A. 1989 Trapping of hot electrons. Appl. Surf. Science 39, 565-577.
51. Xu, M., Tan, C., He, Y. & Wang, Y. 1995 Influence of Fowler-Nordheim tunneling current on the strong inversion high frequency capacitance of thin insulator N-type metal-oxide-semiconductor structures. Electron. Lett. 31, 681-683.
52. Yoneda, K., Okuma, K., Hagiwara, K. & Todokoro, Y. 1995 The reliability evaluation of thin silicon dioxide using the stepped current Tddb technique. J. Elect. Chem. Soc. 142, 596-600.
53. Zafar, S., Conrad, K. A., Liu, Q., Irene, E. A., Hames, G., Kuehn, R. & Wortman, J. J. 1995 Thickness and effective electron mass measurements for thin silicon dioxide films using tunneling current oscillations. Appl. Phys. Lett 67, 1031-1033.
54. 2 under Fowler-Nordheim stress. J. Appl. Phys. 71, 5989-5996.