Enhanced silicon oxide film growth on Si (100) using electron impact

Journal of Applied Physics

Volumn 82, Issue 12, 1997, Pages 6289-6292

  Xu, Jiazhan ^a   Choyke, W J ^a   Yates Jr , John T ^a  

^a UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001060438     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366516     Document Type: Article

References (32)

1. J. G. Ekerdt, Y.-M. Sun, A. Szabo, G. J. Szulczewski, and J. M. White, Chem. Rev. 96, 1499 (1996).
2. G. Lucovsky and M. J. Manilini, J. Vac. Sci. Technol. B 5, 530 (1987).
3. A. C. Adams, Semicond. Sci. Technol. 26, 135 (1983).
4. E. Doering, in Insulating Films on Semiconductors, edited by M. Schulz and G. Pensl (Springer, Berlin, 1981), p. 208.
5. Y. Numasawa, K. Yamazaki, and K. Humano, Jpn. J. Appl. Phys., Part 2 22, L792 (1983).
6. Y. K. Bhatnagar and W. I. Milne, Mater. Res. Soc. Symp. Proc. 131, 513 (1989).
7. P. D. Richard, R. J. Markunas, G. Lucovsky, G. G. Fountain, A. N. Mansour, and D. V. Tsu, J. Vac. Sci. Technol. A 3, 867 (1985).
8. T. Engel, Surf. Sci. Rep. 18, 91 (1993).
9. T. Ohkubo, T. Muraoka, and A. Namiki, Surf. Sci. 357, 684 (1996).
10. M. Riehl-Chudoba, K. M. Schirm, L. Surnev, and P. Soukiassian, Surf. Sci. 331, 375 (1995).
11. F. U. Hillebrecht, M. Ronay, D. Rieger, and F. J. Himpsel, Phys. Rev. B 34, 5377 (1986).
12. S. S. Todorov and E. R. Possum, Appl. Phys. Lett. 52, 48 (1988).
13. P. Bozso and Ph. Avouris, Phys. Rev. B 44, 9287 (1991).
14. J. R. Engstrom, D. J. Bonser, and T. Engel, Surf. Sci. 268, 238 (1992).
15. J. R. Engstrom, D. J. Bonser, and T. Engel, Appl. Phys. Lett. 55, 2202 (1989).
16. B. Carriére, A. Chouiyakh, and B. Lang, Surf. Sci. 126, 495 (1983).
17. Y. Chen, Y.-S. Luo, J. M. Seo, and J. H. Weaver, Phys. Rev. B 43, 4527 (1991).
18. D. Klyachko, P. Rowntree, and L. Sanche, Surf. Sci. 346, 49 (1996).
19. J. Xu, W. J. Choyke, and J. T. Yates, Jr., Appl. Surf. Sci. (accepted).
20. J.-L. Lin and J. T. Yates, Jr., J. Vac. Sci. Technol. A 12, 2795 (1994).
21. P. A. Redhead, J. P. Hobson, and E. V. Kornelsen, in The Physical Basis of Ultrahigh Vacuum (AIP, New York, 1993), Chap. 7, Sec. 7.6.
22. Handbook of Chemistry and Physics, 71st ed., edited by D. R. Lide (CRC, Boston, 1990-91), pp. 12-85.
23. J. M. Seo, K. J. Kim, H. W. Yeom, and Ch. Park, J. Vac. Sci. Technol. A 12, 2255 (1994).
24. G. Hollinger and F. J. Himpsel, J. Vac. Sci. Technol. A 1, 640 (1983).
25. H. Nishino, W. Yang, Z. Dohnálek, V. A. Ukraintsev, W. J. Choyke, and J. T. Yates, Jr., J. Vac. Sci. Technol. A 15, 182 (1997).
26. A. Winkler and J. T. Yates, Jr., J. Vac. Sci. Technol. A 6, 2929 (1988).
27. M. Bozack, L. Muehlhoff, J. N. Russell, Jr., W. J. Choyke, and J. T. Yates, Jr., J. Vac. Sci. Technol. A 5, 1 (1987).
28. O. Sneh, M. L. Wise, A. W. Ott, L. A. Okada, and S. M. George, Surf. Sci. 334, 135 (1995).
29. F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff, and G. Hollinger, Phys. Rev. B 38, 6084 (1988).
30. B. Lamontagne, F. Semond, and D. Roy, Surf. Sci. 327, 371 (1995).
31. G. J. Schulz, Rev. Mod. Phys. 45, 423 (1973).
32. L. A. Silva and R. E. Palmer, Surf. Sci. 272, 313 (1992).