Scaling down and reliability problems of Gigabit CMOS circuits

Microelectronics Reliability

Volumn 37, Issue 1, 1997, Pages 19-37

  Krautschneider, W H ^a   Kohlhase, A ^a   Terletzki, H ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC FIELDS; ELECTRIC RESISTANCE; ELECTRIC WIRING; ELECTROMIGRATION; GATES (TRANSISTOR); MOSFET DEVICES; RANDOM ACCESS STORAGE; RELIABILITY; STRESSES;

DEFECT DENSITY;

CMOS INTEGRATED CIRCUITS;

EID: 0030871507     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00236-3     Document Type: Review

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