Integration of H2 barriers for ferroelectric memories based on SrBi2Ta2O9 (SBT)

Integrated Ferroelectrics

Volumn 31, Issue 1-4, 2000, Pages 273-284

  Hartner, W ^a   Schindler, G ^a   Bosk, P ^a   Gabric, Z ^a   Kastner, M ^a   Beitel, G ^a   Mikolajick, T ^a   Dehm, C ^a   Mazure C ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Encapsula tion; Ferroelectrics; Hydrogen; SBT; SrBi2Ta2O9; Top Electrode

Indexed keywords

ANNEALING; CAPACITORS; CATALYST ACTIVITY; CHEMICAL VAPOR DEPOSITION; ENCAPSULATION; FERROELECTRICITY; HYDROGEN; IRIDIUM COMPOUNDS; OXIDATION; RANDOM ACCESS STORAGE; SILICON NITRIDE; STRONTIUM COMPOUNDS;

ENCAPSULATION BARRIER LAYER; FERROELECTRIC MEMORIES; FERROELECTRIC RANDOM ACCESS MEMEORY; HYDROGEN BARRIERS; STRONTIUM BISMUTH TANTALATE;

FERROELECTRIC DEVICES;

EID: 0034448660     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584580008215660     Document Type: Conference Paper

References (19)