Ultra-thin EBL (Encapsulated Barrier Layer) for ferroelectric capacitor

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 617-620

  Park, In Seon ^a   Kim, Yeong Kwan ^a   Lee, Sang Min ^a   Chung, Ju Hyuck ^a   Kang, Sang Bom ^a   Park, Chang Soo ^a   Yoo, Cha Young ^a   Lee, Sang In ^a   Lee, Moon Yong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ENCAPSULATING BARRIER LAYER (EBL); FERROELECTRIC RANDOM ACCESS MEMORY (FRAM); HYDROGEN ATTACK; INTERMETAL DIELECTRICS (IMD); LEAD ZIRCONATE TITANATE;

ALUMINA; DIELECTRIC FILMS; DIFFUSION IN SOLIDS; ETCHING; FERROELECTRIC DEVICES; HYDROGEN; INSULATING MATERIALS; LEAD COMPOUNDS; RANDOM ACCESS STORAGE; ULTRATHIN FILMS;

CAPACITORS;

EID: 84886448039     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)