High stability electrode technology for stacked SrBi2Ta2O9 capacitors applicable to advanced ferroelectric memory

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 609-612

  Kudo, J ^a   Ito, Y ^a   Mitarai, S ^a   Ogata, N ^a   Yamazaki, S ^a   Urashima, H ^a   Okutoh, A ^a   Nagata, M ^a   Ishihara, K ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC MEMORY TECHNOLOGY;

AMORPHOUS FILMS; ANNEALING; CHEMICAL BONDS; DIELECTRIC FILMS; ELECTRIC CONNECTORS; ELECTRODES; FERROELECTRIC DEVICES; MAGNETRON SPUTTERING; POLYCRYSTALLINE MATERIALS; SILICON; STRONTIUM COMPOUNDS; TANTALUM COMPOUNDS;

CAPACITORS;

EID: 84886447971     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)