Effect of excited-state transitions on the threshold characteristics of a quantum dot laser

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3944, Issue , 2000, Pages

  Asryan, Levon V ^a   Grundmann, Marius ^a   Ledentsov, Nikolai N ^a   Stier, Oliver ^a   Suris, Robert A ^a   Bimberg, Dieter ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRON TRANSITIONS; GAIN CONTROL; HETEROJUNCTIONS; MODAL ANALYSIS; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

EXCITED-STATE TRANSITIONS; QUANTUM DOT LASERS; SINGLE-LAYER MODAL GAINS;

INTEGRATED OPTOELECTRONICS;

EID: 0033685441     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)