SiGe nanostructures

1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998

Volumn 1998-September, Issue , 1998, Pages 38-46

  Vescan, L ^a   Goryll, M ^a   Grimm, K ^a   Dieker, C ^a   Stoica, T ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b Institutul National de Fizica Matixialelor   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

MONOLITHIC INTEGRATED CIRCUITS; NANOSTRUCTURES; PHOTOLITHOGRAPHY; SUBSTRATES;

FABRICATION STRATEGIES; LATERAL CONFINEMENT; PATTERNED SUBSTRATES; QUANTUM SIZE EFFECTS; SELF ORGANIZED GROWTH; SEMICONDUCTOR NANOSTRUCTURES; SI-BASED OPTOELECTRONICS; TRANSITION PROBABILITIES;

SI-GE ALLOYS;

EID: 0342855039     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.1998.750173     Document Type: Conference Paper

References (41)

1. H.P. Tang, L. Vescan and H. Liith, "Equilibrium thermodynamic analysis of the Si-Ge-Cl-H system for atmospheric and low pressure CVD of Si xGex," J. Cryst. Growth, vol.116, pp.1-14, 1992;
2. L. Vescan, "Chemical Vapour Deposition," in Handbook of Thin Film Process Technology, D. A. Glocker and S.I. Shah, Eds. Bristol: IOP, 1995, pp. B1.0:l-B1.0:12andpp. B1.4:l-B.l:41.
3. L. Vescan, C. Dieker, A. Hartmann and A. van der Hart, "Si/Si]. xGex dots grown by selective epitaxy," Semicond. Sci., Techn., vol. 9, pp. 387-391, 1994.
4. U. Zastrow, L. Vescan, R. Butz, K. Schmidt and C. Dieker, "SIMS depth profiling of Si/SiGe heterostructures," in Secondary Ion Mass Spectrometry, SIMS DC, p. 702, 1994.
5. N. Endo, N. Kasai, A. Ishitani and Y. Kurogi, "CMOS technology using SEG isolation technology," IEEE Int.Elect. Dev. Meeting, Tech. Digest, CH1973-7/83, pp. 31-34, 1983.
6. L. Vescan, "Radiative recombination in SiGe/Si dots and wires selectively grown by LPCVD," in Low dimensional Structures prepared by Epitaxial Growth and Regrowth on Patterned Subst.," NATO ASI Series vol. 298, K. Eberl, P.M. Petroff and P. Demeester, Eds. Dordrecht: Kluwer,1995, pp. 173-184.
7. see Low dimensional Structures prepared by Epitaxial Growth and Regrowth on Patterned Subst." NATO ASI Series vol. 298, K. Eberl, P.M. Petroff and P. Demeester, Eds. Dordrecht: Kluwer,1995.
8. T.O. Sedgwick, P.D. Agnello, M. Berkenblit and T.S. Kuan, "Growth of Facet-Free Selective Silicon at Low temperature and atmospheric Pressure ," J. Electrochem. Soc., vol. 138, pp. 3042-3047 , October 1991.
9. L. Vescan, "Selective epitaxial growth of SiGe alloys-influence of growth parameters on film properties," Mat. Sci., Eng. vol. B28, pp. 1-8,1994.
10. G.W. Neudeck, J. Spitz, J.C.H. Chang, J.P. Denton and N, Gallagher, "Precision crystal corner cube arrays for optical gratings formed by (100) silicon planes with selective epitaxial growth," Applied Optics, vol. 35, pp. 3466-3470, July 1996.
11. B.D. Joyce and A. Baldrey, "Selective Epitaxial Deposition of Silicon," Nature, vol. 195, pp. 485-486, 1962.
12. P. Rai-Choudhury and D.K. Schroder, "Selective Silicon Epitaxy and Orientation Dependence of Growth," J. Electrochem. Soc. vol 120, pp. 664-668, 1973.
13. A. Ishitani, H. Kitajima, K. Tanno, and H. Tsuya, "Selective silicon epitaxial growth for device-isolation technology," Microelectronic Engineering, vol. 4, pp.3-33, 1986.
14. L. Vescan, K. Grimm and C. Dieker, .,Facet investigation in selective epitaxial growth of Si and SiGe on (001) Si for optoelectronic devices" J. Vac. Sci., Techn,. vol. B16, pp. 1549-1554, May/June 1998.
15. L. Vescan, "Strained SiGe/Si quantum well dots and wires selectively grown by LPCVD and their optical properties," Thin Solid Films, vol. 294, pp. 284-290, 1997.
16. CI. Drowley, G.A. Reid and R. Hull, ""Model for facet and sidewall defect formation during selective epitaxial growth of (001) silicon," Appl. Phys. Lett., vol. 52, pp. 546-548, 1988.
17. J. Brunner, M. Gail, G. Abstreiter and P. Vogl, "SiGe quantum wells on (110) Si grown by molecular beam epitaxy," J. Cryst. Growth, vol. 150, pp. 1050-1054, 1997.
18. T. Stoica, and L. Vescan, "Misfit dislocations in finite lateral size Sii.jGe, films grown by selective epitaxy," J. Cryst. Growth, vol. 131, pp.32-40, 1993.
19. R. Hull, J.C. Bean, F. Cerdeira, A.T. Fiory and J.M. Gibson, "Stability of Semiconductor strained-layer superlattices," Appl. Phys. Lett., vol. 48, pp. 56-58, 1986.
20. D.J. Eaglesham, and M. Cerullo, "Dislocation-Free Stranski-Krastanow Growth of Ge on Si(lOO)," Phys. Rev. Lett., vol. 64, pp.1943-1946, April 1990.
21. Y.-W. Mo, D.E. Savage, B.S. Swartzentruber and M.G. Lagally, "Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)," Phys. Rev. Lett., vol. 65, pp. 1020-1023, 1990.
22. L. Vescan, W. Jager, C. Dieker, K. Schmidt and H. Liith, "Formation of heterogeneous thickness modulations during epitaxial growth of LPCVD Sii-xGe,/Si quantum well structures," in Mechanisms of Heteroepitaxial Growth, MRS Symposium Proceedings, M.F. Chrisholm et. al., vol. 263, Ed. Pittsburgh, PA: MRS, pp. 23-28, 1992.
23. J. Tersoff and R.M. Tromp, "Shape transition in Growth of Strained Islands," Phys. Rev. Lett., vol. 70, pp. 2782-2785, 1993.
24. B. Voigtlander and A, Zinner, "Simultaneous molecular beam epitaxy growth and scanning tunnelling microscopy imaging during Ge/Si epitaxy," Appl. Phys. Lett., vol. 63, pp. 3055-3057, 1993.
25. R. Apetz, L.Vescan, A. Hartmann, C. Dieker and H. Liith, "Photoluminescence and electroluminescence of SiGe dots fabricated by island growth," Appl. Phys. Lett., vol. 66, pp. 445-447, 1995.
26. J. Tersoff, C. Teichert and M.G. Lagally, "Self-Organization in Growth of Quantum Dot Supperlattices," Phys.Rev.Lett., vol. 76, pp. 1675-1678, March 1996.
27. B. Rahmati, W. Jager, H. Trinkhaus, L. Vescan and H. Liith, ..Vertical ordering of islands in Ge-Si multilayers," Appl. Phys .vol. A 62, pp.575-579, 1996.
28. E. Mateeva, P. Sutter, J.C. Bean and M.G. Lagally, "Mechanism of organization of three-dimensional islands in SiGe/Si multilayers," Appl. Phys. Lett., vol. 71, pp. 3233-3235, December 1997.
29. I. Daruka and A-L. Barabasi, "Dislocation-free Island Formation in Heteroepitaxial Growth: A Study at Equilibrium," Phys. Rev. Lett., vol. 79, pp. 3708-3711,1997.
30. P. Schittenhelm, G. Abstreiter, A. Darhuber, G. Bauer, P. Werner and A. Kosogov, "Growth of self-assembled homogeneous SiGe-dots on Si(100)," Thin Solid Films, vol. 294, pp.291-295, 1997.
31. K. Tillmann, B. Rahmati, H. Trinkhaus, W. Jager, A. Hartmann, L. Vescan and K. Urban, "Strain-induced vertical ordering effects of islands in LPCVD-grown Sii-xGe,/Si bilayer structures on (001)Si," in Inst. Phys. Conf. Ser., vol. 157, pp.343-348, Ed. IOP Publ. Ltd, Oxford, 1997.
32. M. Goryll, L. Vescan, K. Schmidt, S. Mesters and H. Liith, .,Size distribution of Ge islands grown on Si(001)", Appl. Phys. Lett., vol. 71, pp.410-412, July 1997.
33. O.G. Schmidt, C. Lange, K. Eberl, O. Kienzle and F. Ernst, "Formation of carbon-induced germanium dots," Appl. Phys. Lett., vol. 71, pp. 2340-2342, 1997.
34. T. I. Kamins, E.C. Carr, R.S. Williams and S.J. Rosner, "Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressure," Appl. Phys. Lett., vol. 81, pp.211-213, 1997.
35. T.I. Kamins and R.S. Williams, "Lithographic positioning of self-assembled Ge islands on Si(OOl)," Appl. Phys. Lett., vol. 71, pp. 1201-1203, Sept.1997.
36. G. Capellini, L. Di Gaspare and F. Evangelisti, "Atomic force microscopy study of self-organized Ge islands grwon on Si(100) by low pressure chemical vapor deposition," Appl. Phys. Lett., vol. 70, pp.493-995, 1997.
37. F.M. Ross, J. Tersoff and R.M. Tromp, "Coarsening of Self-Assembled Ge Quantum dots on Si(001)," Phys. Rev. Lett, vol. 80, pp. 984-987,1998.
38. G. Medeiros-Ribeiro, A.M. Bratkovski, T.I. Kamins, D.A.A. Ohlberg and R.S. Williams, "Shape Transition of Germanium Nanccrystals on a Silicon (001) Surface from Pyramids to Domes," Science, vol. 279, pp.353-355,1998.
39. M. Goryll, L. Vescan and H. Liith, "Shape transition and photoluminescence of Ge islands grown on (001)Si by LPCVD," submitted.
40. R. Notzel, T. Fukui, H. Hasegawa, J. Temmyo and T. Tamamura, Appl. Phys. Lett. 65 (1994) 2854.
41. L. Vescan, "Lateral ordering of Ge islands along facets,", to be publ. in J. Cryst. Growth.