-
1
-
-
0028386705
-
A 1-GHz BiCMOS RF front-end IC
-
Mar.
-
R. G. Meyer and W. D. Mack, "A 1-GHz BiCMOS RF front-end IC," IEEE J. Solid-State Circuits, vol. 29, pp. 350-355, Mar. 1994.
-
(1994)
IEEE J. Solid-State Circuits
, vol.29
, pp. 350-355
-
-
Meyer, R.G.1
Mack, W.D.2
-
2
-
-
0029255455
-
A 2.7 V GSM transceiver IC's with on-chip filtering
-
Feb. San Francisco, CA
-
C. Marshall, F. Behbahani, W. Birth, A. Fotowat, T. Fuchs, R. Gaethke, E. Heimerl, S. Lee, P. Moore, S. Navid, and E. Saur, "A 2.7 V GSM transceiver IC's with on-chip filtering," in ISSCC Dig. Tech. Papers, Feb. 1995, San Francisco, CA, pp. 148-149.
-
(1995)
ISSCC Dig. Tech. Papers
, pp. 148-149
-
-
Marshall, C.1
Behbahani, F.2
Birth, W.3
Fotowat, A.4
Fuchs, T.5
Gaethke, R.6
Heimerl, E.7
Lee, S.8
Moore, P.9
Navid, S.10
Saur, E.11
-
3
-
-
0029488453
-
A 2.7-4.5 V single-chip GSM transceiver RF integrated circuit
-
Dec.
-
T. Stetzler, I. G. Post, J. H. Havens, and M. Koyama, "A 2.7-4.5 V single-chip GSM transceiver RF integrated circuit," IEEE J. Solid-State Circuits, vol. 30, pp. 1421-1429, Dec. 1995.
-
(1995)
IEEE J. Solid-State Circuits
, vol.30
, pp. 1421-1429
-
-
Stetzler, T.1
Post, I.G.2
Havens, J.H.3
Koyama, M.4
-
4
-
-
0028734742
-
A 2.7 V 800 MHz-2.1 GHz transceiver chipset for mobile radio applications in 25 GHz ft Si-bipolar
-
W. Veit, J. Fenk, S. Ganser, K. Hadjizada, S. Heinen, H. Herrmann, and P. Sehrig, "A 2.7 V 800 MHz-2.1 GHz transceiver chipset for mobile radio applications in 25 GHz ft Si-bipolar," in Proc. 1994 Bipolar/BiCMOS Circuits and Technology Meeting, pp. 175-178.
-
Proc. 1994 Bipolar/BiCMOS Circuits and Technology Meeting
, pp. 175-178
-
-
Veit, W.1
Fenk, J.2
Ganser, S.3
Hadjizada, K.4
Heinen, S.5
Herrmann, H.6
Sehrig, P.7
-
5
-
-
0031071447
-
A 2.7 V GSM transceiver IC
-
San Francisco, CA, Feb.
-
K. Irie, H. Matsui, T. Endo, K. Watanabe, T. Yamawaki, M. Kokubo, and J. Hildersley, "A 2.7 V GSM transceiver IC," in ISSCC Dig. Technical Papers, San Francisco, CA, Feb. 1997, pp. 302-303.
-
(1997)
ISSCC Dig. Technical Papers
, pp. 302-303
-
-
Irie, K.1
Matsui, H.2
Endo, T.3
Watanabe, K.4
Yamawaki, T.5
Kokubo, M.6
Hildersley, J.7
-
6
-
-
0031074522
-
The future of CMOS wireless transceivers
-
San Francisco, CA, Feb.
-
A. Abidi, A. Rofougaran, G. Chang, J. Rael, J. Chang, M. Rofougaran, and P. Chang, "The future of CMOS wireless transceivers," in ISSCC Dig. Tech. Papers, San Francisco, CA, Feb. 1997, pp. 118-119.
-
(1997)
ISSCC Dig. Tech. Papers
, pp. 118-119
-
-
Abidi, A.1
Rofougaran, A.2
Chang, G.3
Rael, J.4
Chang, J.5
Rofougaran, M.6
Chang, P.7
-
7
-
-
0031072026
-
A 1.9 GHz wide-band if double conversion CMOS integrated receiver for cordless telephone applications
-
San Francisco, CA, Feb.
-
J. Rudell, J. Ou, T. B. Cho, G. Chien, F. Brianti, I. A. Weldon, and P. R. Gray, "A 1.9 GHz wide-band IF double conversion CMOS integrated receiver for cordless telephone applications," in ISSCC Dig. Tech. Papers, San Francisco, CA, Feb. 1997, pp. 304-305.
-
(1997)
ISSCC Dig. Tech. Papers
, pp. 304-305
-
-
Rudell, J.1
Ou, J.2
Cho, T.B.3
Chien, G.4
Brianti, F.5
Weldon, I.A.6
Gray, P.R.7
-
8
-
-
0031700277
-
A single-chip CMOS transceiver for DCS-1800 wireless communications
-
San Francisco, CA, Feb.
-
M. Steyaert, M. Borremans, J. Janssens, B. De Muer, N. Itoh, J. Craninckx, J. Crols, E. Morifuji, H. Sasaki, and W. Sansen, "A single-chip CMOS transceiver for DCS-1800 wireless communications," in ISSCC Dig. Tech. Papers, San Francisco, CA, Feb. 1998, pp. 48-49.
-
(1998)
ISSCC Dig. Tech. Papers
, pp. 48-49
-
-
Steyaert, M.1
Borremans, M.2
Janssens, J.3
De Muer, B.4
Itoh, N.5
Craninckx, J.6
Crols, J.7
Morifuji, E.8
Sasaki, H.9
Sansen, W.10
-
9
-
-
0347525630
-
A 0.25 μm CMOS fully integrated IF-baseband-strip for a single superheterodyne GSM receiver
-
The Hague, The Netherlands
-
P. Orsatti, F. Piazza, and Q. Huang, "A 0.25 μm CMOS fully integrated IF-baseband-strip for a single superheterodyne GSM receiver," in Proceeding of the ESSCIRC. The Hague, The Netherlands: 1998. pp. 64-67.
-
(1998)
Proceeding of the ESSCIRC
, pp. 64-67
-
-
Orsatti, P.1
Piazza, F.2
Huang, Q.3
-
10
-
-
0348155483
-
GSM 05.05 version 4.19.1, 11th Ed
-
ETSI, Dec.
-
GSM 05.05 version 4.19.1, 11th Ed. GSM Standard, ETSI, Dec. 1997.
-
(1997)
GSM Standard
-
-
-
11
-
-
0031071709
-
A 2 mA/3 V 71 MHz IF amplifier in 0.4 μm CMOS programmable over 80 dB range
-
San Francisco, CA, Feb.
-
F. Piazza, P. Orsatti, Q. Huang, and H. Miyakawa, "A 2 mA/3 V 71 MHz IF amplifier in 0.4 μm CMOS programmable over 80 dB range," in ISSCC Dig. Tech. Papers, San Francisco, CA, Feb. 1997, pp. 78-79.
-
(1997)
ISSCC Dig. Tech. Papers
, pp. 78-79
-
-
Piazza, F.1
Orsatti, P.2
Huang, Q.3
Miyakawa, H.4
-
13
-
-
0347525632
-
-
Datasheets: Duplexer, Murata DFY2R902CR947BHGF, RX interstage filter, Murata SAFC947.5MC70T, TX interstage filter, Murata SAFC902.5MA70N and IF filter, Siemens B4556 and B4568
-
Datasheets: Duplexer, Murata DFY2R902CR947BHGF, RX interstage filter, Murata SAFC947.5MC70T, TX interstage filter, Murata SAFC902.5MA70N and IF filter, Siemens B4556 and B4568.
-
-
-
-
14
-
-
0032123968
-
The impact of scaling down to deep-submicron on CMOS RF circuits
-
July
-
Q. Huang, F. Piazza, P. Orsatti, and T. Ohguro, "The impact of scaling down to deep-submicron on CMOS RF circuits," IEEE J. Solid-State Circuits, vol. 33, pp. 1023-1036, July 1998.
-
(1998)
IEEE J. Solid-State Circuits
, vol.33
, pp. 1023-1036
-
-
Huang, Q.1
Piazza, F.2
Orsatti, P.3
Ohguro, T.4
-
15
-
-
0031147079
-
A 1.5 V. 1.5 GHz CMOS low noise amplifier
-
May
-
D. Shaeffer and T. Lee, "A 1.5 V. 1.5 GHz CMOS low noise amplifier," IEEE J. Solid-State Circuits, vol. 32, pp. 745-759, May 1997.
-
(1997)
IEEE J. Solid-State Circuits
, vol.32
, pp. 745-759
-
-
Shaeffer, D.1
Lee, T.2
-
16
-
-
0030084863
-
A 2.7 V 900 MHz CMOS LNA and mixer
-
A. Karanicolas, "A 2.7 V 900 MHz CMOS LNA and mixer," in ISSCC Dig. Tech. Papers, 1996, pp. 50-51.
-
(1996)
ISSCC Dig. Tech. Papers
, pp. 50-51
-
-
Karanicolas, A.1
-
17
-
-
0030690643
-
An inductorless 900 MHz RF low-noise amplifier in 0.9 μm CMOS
-
Y. Shin and K. Bult, "An inductorless 900 MHz RF low-noise amplifier in 0.9 μm CMOS," in Proc. CICC'97, pp. 513-516.
-
Proc. CICC'97
, pp. 513-516
-
-
Shin, Y.1
Bult, K.2
|