Comments on "a small-signal MOSFET model for radio frequency 1C applications"

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 17, Issue 4, 1998, Pages 372-374

  Tin, Suet Fong ^a   Osman, Ashraf A ^a   Mayaram, Kartikeya ^a  

^a Washington State University   (United States)

Author keywords

Gate noise; Gate resistance; Lumped element model; Mosfet rf modeling; Small signal model

Indexed keywords

EID: 0002284969     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/43.703827     Document Type: Article

References (4)

1. B. Razavi, R. H. Yan, and K. F. Lee, "Impact of distributed gate resistance on the performance of MOS devices," IEEE Trans. Circuits Syst. I, vol. 41, pp. 750-754, Nov. 1994.
2. B. Razavi, K. F. Lee, and R. H. Yan, "Design of high-speed, low power frequency dividers and phase-locked loops in deep submicron CMOS," IEEE]. Solid-State Circuits, vol. 30, pp. 101-109, Feb. 1995.
3. D. K. Shaeffer and T. H. Lee, "A 1.5 V, 1.5 GHz CMOS low noise amplifier," IEEEJ. Solid-State Circuits, vol. 32, pp. 745-759, May 1997.
4. MOSIS Parametric Test Results, http://www.mosis.org/vendors.html.