Assessment of the quantitative characterization of localized strain using electron diffraction contrast imaging

Ultramicroscopy

Volumn 69, Issue 3, 1997, Pages 151-167

  Janssens, Koenraad G F ^a,c   Van Der Biest, Omer ^a   Vanhellemont, Jan ^b,d   Maes, Herman E ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

^c Onderzoekscentrum voor de Aanwending van Staal   (Belgium)

^d SILTRONIC AG   (Germany)

Author keywords

Computer modeling and simulation; Convergent beam electron diffraction; Mechanical properties of solids; Nanodiffraction; Selected area electron diffraction; Transmission, reflection and scanning electron microscopy (including EBIC)

Indexed keywords

COMPUTER SIMULATION; ELECTRON DIFFRACTION; IMAGE ANALYSIS; IMAGING TECHNIQUES; PARTICLES (PARTICULATE MATTER); RELAXATION PROCESSES; SCANNING ELECTRON MICROSCOPY; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

CONVERGENT BEAM ELECTRON DIFFRACTION; ELECTRON DIFFRACTION CONTRAST IMAGING; NANODIFFRACTION; SELECTED AREA ELECTRON DIFFRACTION;

STRESS ANALYSIS;

ARTICLE; COMPUTER PROGRAM; CONTRAST ENHANCEMENT; DIFFRACTION; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; IMAGE ANALYSIS; INTERMETHOD COMPARISON; QUANTITATIVE DIAGNOSIS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0031259634     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(97)00038-7     Document Type: Article

References (36)

1. M.F. Ashby, L.M. Brown, Diffraction contrast from spherically symmetrical coherency strains, Phil. Mag. 8 (1963) 1083-1103.
2. M.F. Ashby, L.M. Brown, On diffraction contrast from inclusions, Phil. Mag. 8 (1963) 1649-1676.
3. A.K. Head, P. Humble, L.M. Clarebrough, A.J. Morton, C.T. Forwood, Computed Electron Micrographs and Defect Identification, Defects in Crystalline Solids, vol. 7, North Holland, New York, 1973.
4. P.B. Hirsch, A. Howie, R.B. Nicholson, D.W. Pashley, M.J. Whelan, Electron Microscopy of Thin Crystals, Butterworths, London, 1965.
5. J.E. Angelo, W.W. Gerberich, Computer simulation of misfit dislocation contrast at an FeAl/GaAs interface, Ultramicroscopy 40 (1992) 313-320.
6. G.R. Booker, P.M. Hazzledine, Electron microscope image profiles of planar defects in crystals, Phil. Mag. 15 (1966) 523-527.
7. R. Bullough, D.M. Maher, R.C. Perrin, Electron microscope image contrast from dislocation loops, Phys. Stat. Sol. B 43 (1971) 689-706.
8. Y.L. Chen, R.W. Carpenter, Strain field measurement of plate-like defect in silicon, Proc. 49th Annual Meeting of the Electron Microscopy Society of America, 1991, 872-873.
9. H.P. Degischer, Diffraction contrast from coherent precipitates in elastically-anisotropic materials, Phil. Mag. 26 (1972).
10. M. De Graef, D.R. Clarke, Measurement of residual stress in MgO thin films on GaAs by electron microscopy, Appl. Phys. Lett. 63 (1993) 1044-1046.
11. M. De Graef, D.R. Clarke, Strain contrast at crack tips for in-situ transmission electron microscopy straining experiments, Ultramicroscopy 49 (1993) 354-365.
12. P.E. Donovan, W.M. Stobbs, A computational assessment of a method for mapping localised displacement fields at boundaries, Ultramicroscopy 23 (1987) 119-133.
13. A.J. Harvey, D.A. Faux, U. Bangert, P. Charsley, Strain determination in iii-v compound heterostructure strained layers by comparison of experimental and simulated electron diffraction contrast in 90 deg wedges, Phil Mag. Lett. 63 (4) (1991) 241-244.
14. R. Hillebrand, K. Scheerschmidt, J. Heydenreich, Computer simulation of diffraction contrast images and lattice fringe patterns of small hexagonal dislocation loops, Ultramicroscopy 20 (1986) 279-292.
15. S.M. Holmes, B.L. Eyre, C.A. English, R.C. Perrin, Electron microscope image contrast from small dislocation loops: 3 theoretical predictions for non-edge dislocation loops in a bcc crystal, Harwell Report, AERE-R9307, 1979.
16. C.J. Humphreys, A. Howie, G.R. Booker, Some electron diffraction contrast effects at planar defects in crystals, Phil. Mag. 15 (1966) 507-522.
17. D.D. Perovic, G.C. Weatherly, On the electron microscope contrast of doped semiconductor layers, Phil. Mag. A 63 (4) (1991) 757-784.
18. Y. Tomokiyo, S. Matsumura, M. Toyohara, Strain contrast of coherent precipitates in Cu-Co alloys under excitation of high order reflections, J. Electron. Microsc. 62 (4) (1985) 338-346.
19. S. Matsumura, M. Toyohara, Y. Tomokiyo, Strain contrast of coherent precipitates in bright-field images under zone axis incidence, Phil Mag. A 62 (6) (1990) 653-670.
20. H.C. Neethling, H.C. Snyman, C.A.B. Ball, Analysis of transmission electron microscopy images of hydrogen platelets in proton-bombarded gas, J. Appl. Phys. 63 (6) (1988) 704-711.
21. S.L. Sass, T. Mura, J.B. Cohen, Diffraction contrast from non-spherical distortions - in particular a cuboidal inclusion, Phil. Mag. 16 (1967) 679-690.
22. K. Scheerschmidt, R. Hillebrand, On the calculation of electron microscope images of holes and spherical inclusions using the multi-slice method, Ultramicroscopy 23 (1990) 27-39.
23. Y.Q. Sun, Diffraction contrast from the displacement field of antiphase-domain-bounbary tubes, Phil. Mag. A 65 (2) (1992) 287-309.
24. M. Wilkens, Identification of small defect clusters in particle-irradiated crystals by means of transmission electron microscopy, in: S. Amelinckx, R. Gevers, G. Remaut, J. Van Landuyt (Eds.), Modern Diffraction and Imaging Techniques in Material Science, North Holland, New York, 1970, pp. 233-256.
25. M. Wilkens, Progress in the Study of Small Defect Agglomerates, Electron Microscopy in Materials Science, vol. 2, "Ettore Majorana" International Centre for Scientific Culture, Third Course of the International School of Electron microscopy, 1976, pp. 647-704.
26. K.G.F. Janssens, J. Vanhellemont, M. De Graef, O. Van der Biest, SIMCON: a versatile software package for the simulation of electron diffraction contrast images of arbitrary displacement fields, Ultramicroscopy 45 (1992) 323-335.
27. K.G.F. Janssens, SIMCON http://www.mtm.kuleuven. ac.be/~simcon/.
28. A. Howie, M.J. Whelan, Diffraction contrast of electron microscopy images of crystal defects, Proc. Roy. Soc. London A 263 (1961) 217-237.
29. W.H. Press, B.P. Flannery, S.A. Teukolsky, W.T. Vetterling, Numerical Recipes, The Art of Scientific Computing, Cambridge University Press, Cambridge, 1989.
30. J.A. Zonneveld, Automatic Numerical Integration, Mathematisch Centrum, North-Holland, Amsterdam, 1979.
31. M.H. Loretto, Electron Beam Analysis of Materials, Chapman & Hall, London, 1984.
32. J.P. Benedict, S.J. Klepeis, W.G. Vandygrift, R. Anderson, A method for precision specimen preparation for both SEM and TEM analysis, EMSA Bull. 19 (2) (1989) 74-80.
33. R. Hull, D. Bahnck, F.A. Stevie, L.A. Koszi, S.N.G. Chu, Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging and focussed ion beam sputtering, Appl. Phys. Lett. 62 (26) (1993) 3408-3410.
34. K.G.F. Janssens, O. Van der Biest, J. Vanhellemont, Herman E. Maes, Robert Hull, Characterization of strain with nanometer range resolution using electron diffraction contrast imaging, including application to a semiconductor laser structure, Appl. Phys. Lett. 67 (11) (1995) 1530-1532.
35. K.G.F. Janssens, Localized strain characterization using electron diffraction contrast imaging, PhD. Thesis, KULeuven, 1996. http://www.mtm.kuleuven.ac.be/ ∼simcon/PhDthesis.html.
36. K.G.F. Janssens, J. Vanhellemont, O. Van der Biest, H.E. Maes, On the characterization of the strain field of lattice defects in silicon with nanometer resolution, Inst. Phys. Conf. Ser. 135 (1993) 21-24.