Strain measurements in thin film structures by convergent beam electron diffraction

Journal de Physique III

Volumn 7, Issue 12, 1997, Pages 2375-2381

  Armigliato, A ^a   Balboni, R ^b   Benedetti, A ^c   Frabboni, S ^d   Tixier, A ^a   Vanhellemont, J ^b  

^a CNR   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c STMICROELECTRONICS   (Italy)

^d IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; ELASTICITY; ELECTRON BEAMS; ELECTRON DIFFRACTION; ELECTRON SCATTERING; HETEROJUNCTIONS; LATTICE CONSTANTS; SEMICONDUCTING SILICON; STRESS RELAXATION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CONVERGENT BEAM ELECTRON DIFFRACTION (CBED) TECHNIQUE;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031355986     PISSN: 11554320     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp3:1997265     Document Type: Article

References (12)

1. Armigliato A., Servidori M., Cembali F., Fabbri R., Rosa R., Corticelli F., Govoni D., Drigo A. V., Mazzer M., Romanato F., Frabboni S., Balboni R., lyer S.S. and Guerrieri A., Structural and analytical characterization of Sii_x Gez/Si heterostructures by Rutherford backscattering spectrometry and channeling, analytical electron microscopy and double crystal X-ray diffractometry, Microsc. Microanal. Microstruct. 3 (1992) 363.
2. Armigliato A., Balboni R., De Wolf I., Frabboni S., Janssens K.G.F. and Vanhellemont J., in Microscopy of Semiconducting Materials, Determination of lattice strain in local isolation structures by electron diffraction techniques and micro-Raman spectroscopy, Inst. Phys. Conf. Ser. 134 (1993) 229.
3. Mäher D.M., Fraser H.L., Humphreys C.J., Knoell R.V. and Bean J.C., Detection and measurement of local distortions in a semiconductor layered structure by convergent beam electron diffraction, Appl. Phys. Lett. 50 (1987) 574.
4. x/Si heterostructures and local isolation structures, Mat. Sei. Technol. 11 (1995) 400.
5. Treacy M.M.J. and Gibson J.M., The effects of elastic relaxation on transmission electron microscopy studies of thinned composition-modulated materials, J. Vac. Sei. Technol. B4 (1986) 1458.
6. Perovic D.D., Wheatherly G.G. and Houghton D.C., On the electron diffraction contrast of coherently strained semiconductor layers, Phil. Mag. AG4 (1991) 1.
7. 1-x/Si strained-layer superlattices, Appl. Phys. Lett. 66 (1995) 2247.
8. Jones P.M., Rackham G.M. and Steeds J.W., Higher order Laue zone effects in electron diffraction and their use in lattice parameter determination, Proc. R. Soc. Land A 354 (1977) 197.
9. Stadelmann P., EMS - A software package for electron diffraction analysis and HREM image simulation in materials science, Ultramicroscopy 21 (1987) 131.
10. 7-δ from nanometer-sized region, Ultramicroscopy 41 (1992) 211.
11. Hu S.M., Film-edge-induced stress in substrates, J. Appl. Phys. 50 (1979) 4661.
12. Rafferty C.S., Stress effects in silicon oxidation-simulation and experiments, PhD Dissertation, Stanford University (1989).