Study of high frequency response of self-organised stacked quantum dot lasers at room temperature

Electronics Letters

Volumn 33, Issue 19, 1997, Pages 1641-1642

  Mao, M H ^a   Heinrichsdorff, F ^a   Krost, A ^a   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Semiconductor junction lasers; Semiconductor quantum dots

Indexed keywords

CURRENT DENSITY; FREQUENCY RESPONSE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NATURAL FREQUENCIES; OSCILLATIONS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TRANSPARENCY;

CAVITY LASERS; RELAXATION OSCILLATION FREQUENCY;

SEMICONDUCTOR LASERS;

EID: 0031235086     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971105     Document Type: Article

References (14)

1. ARAKAWA, Y., and SAKAKI, H.: 'Multidimensional quantum well laser and temperature dependence of its threshold current', Appl. Phys. Lett., 1982, 40, pp. 939-941
2. BIMBERG, D., KIRSTAEDTER, N., LEDENTSOV, N.N., ALFEROV, Z.I., KOP'EV, P.S., and USTINOV, V.M.: 'InGaAs/GaAs quanum dot lasers', IEEE J. Sel. Top. Quantum Electron., (in press)
3. ASADA, M., MIYAMOTO, Y., and SUEMATSU, Y.: 'Gain and the threshold of three-dimensional quantum-box lasers', IEEE J. Quantum Electron., 1986, QE-22, pp. 1915-1921
4. KIRSTAEDTER, N., SCHMIDT, O.G., LEDENTSOV, N.N., BIMBERG, D., USTINOV, V.M., EGOROV, A.Y., ZHUKOV, A.E., MAXIMOV, M.V., KOP'EV, P.S., and ALFEROV, z.i.: 'Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers', Appl. Phys. Lett., 1996, 69, pp. 1226-1228
5. SCHMIDT, O.G., KIRSTAEDTER, N., LEDENTSOV, N.N., MAO, M.-H., BIMBERG, D., USTINOV, V.M., EGOROV, A.Y., ZHUKOV, A.E., MAXIMOV, M.V., KOP'EV, P.S., and ALFEROV, Z.I.: 'Prevention of gain saturation by multi-layer quantum dot lasers', Electron. Lett., 1996, 32, pp. 1302-1304
6. SHERNYAKOV, YU.M., EGOROV, A.Y., ZHUKOV, A.E., ZAISEV, S.V., KOVSH, A.R., KRESTNIKOV, I.L., LUNEV, A.V., LEDENTSOV, N.N., MAXIMOV, M.V., SAKHAROV, A.V., USTINOV, V.M., CHAO CHEN. , KOP'EV, P.S., ALFEROV, Z.I., and BIMBERG, D.: 'Quantum-dot cw heterojuction injection laser operating at room temperature with an output power of 1W', Tech. Phys. Lett., 1997, 23, pp. 149-150
7. HEINRICHSDORFF, F., MAO, M.-H., KIRSTAEDTER, N., KROST, A., BIMBERG, D., KOSOGOV, A.D., and WERNER, p.: 'Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition', Appl. Phys. Lett., 1997, 71, pp. 22-24
8. 0.6As/GaAs quantum dot lasers', Appl. Phys. Lett., 1997, 70, pp. 2952-2953
9. BOWERS, J.E., HEMENWAY, B.R., GNAUCK, A.H., and WILT, D.P.: 'High-speed InGaAsP constricted-mesa lasers', IEEE J. Quantum Electron., 1986, QE-22, pp. 833-844
10. NAGARAJAN, R., ISHIKAWA, M., FUKUSHIMA, T., GEELS, R.S., and BOWERS, J.E.: 'High speed quantum-well lasers and carrier transport effects', IEEE J. Quantum Electron., 1992, QE-28, pp. 1990-2008
11. AGRAWAL, G.P., and DUTTA, N.K.: 'Long-wavelength semiconductor lasers' (Van Nostrand Reinhold, New York, 1986)
12. SWAMINATHAN, V., and MACRANDER, A.T.: 'Materials aspects of GaAs and InP based structures' (Prentice Hall, Englewood Cliffs, New Jersey, 1991)
13. WELCH, D.F., STREIFER, W., SCHAUS, C.F., SUN, S., and GOURLEY, P.L.: 'Gain characteristics of strained quantum well lasers', Appl. Phys. Lett., 1990, 56, pp. 10-12
14. LAU, K.Y., and YARIV, A.: 'Ultra-high speed semiconductor lasers', IEEE J. Quantum Electron., 1985, QE-21, pp. 121-138