Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots

Electronics Letters

Volumn 34, Issue 16, 1998, Pages 1588-1590

  Mukai, K ^a   Nakata, Y ^a   Shoji, H ^a   Sugawara, M ^a   Ohtsubo, K ^a   Yokoyama, N ^a   Ishikawa, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; LIGHT EMISSION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0032490759     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981075     Document Type: Article

References (3)

1. ARAKAWA, Y., and SAKAKI, H.: 'Multidimensional quantum well laser and temperature dependence of its threshold current', Appl. Phys. Lett., 1982, 40, (11), pp. 939-941
2. HEINRICHSDORFF, F., MAO, M.-H., KIRSTAEDTER, N., KROST, A., and BIMBERG, D.: 'Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots by metalorganic chemical vapor deposition', Appl. Phys. Lett., 1997, 71, (1), pp. 22-24
3. SHOJI, H., NAKATA, Y., MUKAI, K., SUGIYAMA, Y., YOKOYAMA, N., and ISHIKAWA, H.: 'Application of narrow emission spectrum closely-stacked structure to quantum dot lasers'. Tech. Dig. 2nd Opt. and Commun. Conf., Seoul, Korea, 1997, pp. 176-177