Growth of high-performance GaN modulation-doped field-effect transistors by ammonia-molecular-beam epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 2, 2000, Pages 652-655

  Tang, H ^a   Webb, J B ^a   Bardwell, J A ^a   MacElwee, T ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CARRIER CONCENTRATION; CARRIER MOBILITY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; TRANSCONDUCTANCE;

DONOR BARRIER LAYER; INSULATING BUFFER LAYER; MODULATION DOPED FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 0034156416     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582255     Document Type: Article

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