Oxygen gettering on buried layers at post-implantation annealing of hydrogen implanted czochralski silicon

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 91-96

  Job, R ^a   Fahrner, W R ^a   Ulyashin, A G ^b   Bumay, Yu A ^b   Ivanov, A I ^b   Palmetshofer, L ^c  

^a UNIVERSITY OF HAGEN   (Germany)

^b BELARUSIAN NATIONAL TECHNICAL UNIVERSITY   (Belarus)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

Hydrogen Implantation in Silicon; Oxygen in Silicon; Oxygen Precipitates; Thermal Donors

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; HYDROGEN; ION IMPLANTATION; OXYGEN; PRECIPITATION (CHEMICAL); SECONDARY ION MASS SPECTROMETRY; VACUUM APPLICATIONS; DEFECTS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

OXYGEN GETTERING; OXYGEN PRECIPITATION;

SEMICONDUCTING SILICON; OXYGEN;

HYDROGEN IMPLANTATION; OXYGEN CONCENTRATIONS; OXYGEN IN SILICON; OXYGEN PRECIPITATES; POSTIMPLANTATION ANNEALING; SECONDARY ION MASS SPECTROSCOPIES (SIMS); THERMAL DONOR; THERMAL DONOR FORMATION;

EID: 0031377339     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.91     Document Type: Article

References (17)

1. B. Mizuno, M. Kubota, N. Nomura, H. Iwasaki, J. Appl. Phys. 62, 2566 (1987).
2. J. Wong-Leung, C.F. Ascheren, M. Petravic, R.G. Elliman, J.S. Williams, Appl. Phys. Lett. 66, 1231 (1995).
3. B. Mohadjery, J.S. Williams, J. Wong-Leung, Appl. Phys. Lett. 66, 1889 (1995).
4. S.J. Pearton, J.W. Corbett, M. Stavola, "Hydrogen in Crystalline Semiconductors", Springer-Verlag, Berlin, Heidelberg, New York (1992).
5. G.F. Cerofolini, R. Balboni, D. Bisero, F. Corni, S. Frabboni, G. Ottaviani, R. Tonini, R.S. Brusa, A. Zecca, M. Ceschini, G. Giebel, L. Pavesi, Phys. Stat. Sol. (a) 150, 539 (1995).
6. M.H.F. Overwijk, J. Politick, R.C.M. de Kruif, P.C. Zalm, Nucl. Instr. Meth. Phys. Research B 96, 257 (1995).
7. V. Raineri, A. Battaglia, E. Rimini, Nucl. Instr. Meth. Phys. Research B 96, 249 (1995).
8. M. Bruni, D. Bisero, R. Tonini, G. Ottaviani, G. Queirolo, R. Bottini, Phys. Rev. B 49, 5291 (1994).
9. J.W. Medernach, T.A. Hill, S.M. Myers, T.J. Headley, J. Electrochem. Soc. 143, 725 (1996).
10. M. Tamura, Mater. Sci. Reports 6, 141 (1991).
11. A.R. Brown, M. Clayboum, R. Murray, P.S. Nandra, R.C. Newman, J.H. Tucker, Semicond. Sci. Technol. 3, 591 (1988).
12. R. Murray, A.R. Brown, R.C. Newman, Mater. Sci. Eng. B 4, 299 (1990).
13. H.J. Stein, S.K. Hahn, Appl. Phys. Lett. 56, 63 (1990).
14. H.J. Stein, S.K. Hahn, J. Appl. Phys. 75, 3477 (1994).
15. H.J. Stein, S.K. Hahn, J. Electrochem. Soc. 142, 1242 (1995).
16. F. Shimura (editor), "Oxygen in Silicon", Academic Press, New York (1994).
17. A.G. Ulyashin, Yu.A. Bumay, A.I. Ivanov, V.S. Varichenko, A.M. Zaitsev, N.M. Kazychits, W.R. Fahrner, in: "Early Stages of Oxygen Precipitation in Silicon", editor: R. Jones, Kluwer Academic Publishers, Dordrecht, (1996), p.455.