H2 molecules in c-Si after hydrogen plasma treatment

Solid State Communications

Volumn 105, Issue 4, 1998, Pages 215-219

  Leitch, A W R ^a,b   Alex, V ^a   Weber, J ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

Author keywords

A. Semiconductors; C. Impurities in semiconductors

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; HYDROGEN; MOLECULES; PLASMA APPLICATIONS; PLASMAS; RAMAN SPECTROSCOPY;

HYDROGEN PLASMA TREATMENT; VOID;

SILICON WAFERS;

EID: 0031621126     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)10107-7     Document Type: Article

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