Microstructural properties of helium implanted void layers in silicon as related to front-Side gettering

Journal of the Electrochemical Society

Volumn 143, Issue 2, 1996, Pages 725-735

  Medernach, J W ^a   Hill, T A ^a   Myers, S M ^a   Headley, T J ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; GASES; HYDROGEN; ION IMPLANTATION; LOW TEMPERATURE PROPERTIES; MICROSTRUCTURE; OXIDATION; OXYGEN; SEMICONDUCTING SILICON; SURFACES;

DRY OXIDATION PROCESSES; GETTERING TECHNIQUE; LOW TEMPERATURE ANNEALING; MICROSTRUCTURAL PROPERTIES; WET OXIDATION PROCESSES;

HELIUM;

EID: 0030084719     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836509     Document Type: Article

References (24)

1. T. E. Seidel, R. L. Meek, and A. G. Cullis, J. Appl. Phys., 46, 600 (1975).
2. D. Lecrosnier, J. Paugam, G. Pelous, F. Richou, and M. Salvi, ibid., 52, 8240 (1981).
3. A. G. Cullis, T. E. Seidel, and R. L. Meek, ibid., 49, 5188 (1978).
4. T. E. Seidel, R. L. Meek, and A. G. Cullis, ibid., 46, 600 (1975).
5. T. E. Seidel, G. A. Pasteur, and J. C. Tsai, Appl. Phys. Lett., 29, 648 (1976).
6. F. Kirscht, Private communication.
7. H. Wong, J. Lou, N. W. Cheung, E. P. Kvam, K. M. Yu, D. A. Olson, and J. Washburn, Appl. Phys. Lett., 57, 798 (1990).
8. H. Wong, N. W. Cheung, and P. K. Chu, ibid., 52, 889 (1988).
9. C. C. Griffioen, J. H. Evans, E C. deJong, and A. Van Veen, Nucl. Iustrum. Meth., B27, 417 (1987).
10. D. M. Follstaedt, Appl. Phys. Lett., 62, 1116 (1993); D. M. Follstaedt, S. M. Myers, and H. J. Stein, Mater. Res. Soc. Symp. Proc., 279, 105 (1993); D. M. Follstaedt, S. M. Myers, W. M. Wampler, and H. J. Stein, in Proceedings of Electron Microscopy Society, p. 334, San Francisco Press, San Francisco, CA (1992); D. J. Eaglesham, A. E. White, L. C. Feldman, N. Moriya, and D. C. Jacobson, Phys. Rev. Lett., 70, 1643 (1993).
11. D. M. Follstaedt, Appl. Phys. Lett., 62, 1116 (1993); D. M. Follstaedt, S. M. Myers, and H. J. Stein, Mater. Res. Soc. Symp. Proc., 279, 105 (1993); D. M. Follstaedt, S. M. Myers, W. M. Wampler, and H. J. Stein, in Proceedings of Electron Microscopy Society, p. 334, San Francisco Press, San Francisco, CA (1992); D. J. Eaglesham, A. E. White, L. C. Feldman, N. Moriya, and D. C. Jacobson, Phys. Rev. Lett., 70, 1643 (1993).
12. D. M. Follstaedt, Appl. Phys. Lett., 62, 1116 (1993); D. M. Follstaedt, S. M. Myers, and H. J. Stein, Mater. Res. Soc. Symp. Proc., 279, 105 (1993); D. M. Follstaedt, S. M. Myers, W. M. Wampler, and H. J. Stein, in Proceedings of Electron Microscopy Society, p. 334, San Francisco Press, San Francisco, CA (1992); D. J. Eaglesham, A. E. White, L. C. Feldman, N. Moriya, and D. C. Jacobson, Phys. Rev. Lett., 70, 1643 (1993).
13. D. M. Follstaedt, Appl. Phys. Lett., 62, 1116 (1993); D. M. Follstaedt, S. M. Myers, and H. J. Stein, Mater. Res. Soc. Symp. Proc., 279, 105 (1993); D. M. Follstaedt, S. M. Myers, W. M. Wampler, and H. J. Stein, in Proceedings of Electron Microscopy Society, p. 334, San Francisco Press, San Francisco, CA (1992); D. J. Eaglesham, A. E. White, L. C. Feldman, N. Moriya, and D. C. Jacobson, Phys. Rev. Lett., 70, 1643 (1993).
14. S. M. Myers, D. M. Follstaedt, D. M. Bishop, and J.W. Medernach, in Semiconductor Silicon 1994, H. R. Huff, W. Bergholz, and K. Sumino, Editors, PV 94-10, p. 808, The Electrochemical Society Proceedings Series, Pennington, NJ (1994); S. M. Myers, D. M. Follstaedt, G. A. Petersen, C. H. Seager, H. J. Stein, and W. R. Wampler, in Proceedings of 9th International Conference on Ion Beam Modification of Materials 1995, Nucl. Instrum. Meth. B, In press.
15. S. M. Myers, D. M. Follstaedt, D. M. Bishop, and J.W. Medernach, in Semiconductor Silicon 1994, H. R. Huff, W. Bergholz, and K. Sumino, Editors, PV 94-10, p. 808, The Electrochemical Society Proceedings Series, Pennington, NJ (1994); S. M. Myers, D. M. Follstaedt, G. A. Petersen, C. H. Seager, H. J. Stein, and W. R. Wampler, in Proceedings of 9th International Conference on Ion Beam Modification of Materials 1995, Nucl. Instrum. Meth. B, In press.
16. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids, Vol. 1, Pergamon Press, New York (1985); J. F. Zeigler, Private communication.
17. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids, Vol. 1, Pergamon Press, New York (1985); J. F. Zeigler, Private communication.
18. S. M. Myers, D. M. Follstaedt, H. J. Stein, and W. R. Wampler, Phys. Rev., B47, 13380 (1993).
19. D. M. Follstaedt, S. M. Myers, G. A. Petersen, and J. W. Medernach, Paper presented at The Materials Society Annual Meeting, Las Vegas, NV, Feb. 16-19, 1995, to be published J. Electron. Mater.
20. J. W. Leung, J. S. Williams, K. G. Elliman, E. Nygren, D. J. Eaglesham, D. C. Jacobson, and J. M. Poate, Nucl. Instrum. Methods, B96, 253 (1995).
21. C. H. Seager and R. A. Anderson. J. Appl. Phys., 68, 3268 (1990).
22. S. M. Sze, Physics of Semiconductors, 2nd ed., Wiley-Interscience, New York (1981)
23. C. H. Seager, S. M. Myers, R. A. Anderson, W. L. Warren, and D. M. Follstaedt, Phys. Rev., B50, 2458 (1994).
24. A. Van Wieringen and N. Warmoltz, Physica, 22, 849 (1956).