-
1
-
-
0024870921
-
Future trends and applications of ultra-clean technology
-
T. Ohmi, “Future trends and applications of ultra-clean technology,” in IEDM Tech. Dig., 1989, pp. 49–52.
-
(1989)
IEDM Tech. Dig.
, pp. 49-52
-
-
Ohmi, T.1
-
2
-
-
0017022429
-
Cleanliness and the cleaning of silicon wafers
-
Nov.
-
J. A. Amick, “Cleanliness and the cleaning of silicon wafers,” Solid State Technol., pp. 47–52, Nov. 1976.
-
(1976)
Solid State Technol.
, pp. 47-52
-
-
Amick, J.A.1
-
3
-
-
0014800514
-
Cleaning solution based on hydrogen peroxide for use in silicon semiconductor technology
-
June
-
W. Kern and D. A. Pauotien, “Cleaning solution based on hydrogen peroxide for use in silicon semiconductor technology,” RCA Rev., vol. 31, pp. 187–205, June 1970.
-
(1970)
RCA Rev.
, vol.31
, pp. 187-205
-
-
Kern, W.1
Pauotien, D.A.2
-
4
-
-
0013456199
-
Device degradation by metallic contamination, and evaluation and cleaning of metallic contaminants
-
Dec.
-
T. Shimono, M. Morita, Y. Muramatsu, and M. Tsuji, “Device degradation by metallic contamination, and evaluation and cleaning of metallic contaminants,” in Proc. 8th Workshop on ULSI Clean Technology, Advanced Wet Chemical Processing I, Dec. 1990, pp. 59–68.
-
(1990)
Proc. 8th Workshop on ULSI Clean Technology, Advanced Wet Chemical Processing I
, pp. 59-68
-
-
Shimono, T.1
Morita, M.2
Muramatsu, Y.3
Tsuji, M.4
-
5
-
-
0024714662
-
Particle free wafer cleaning and drying technology
-
Aug.
-
H. Mishima, T. Yasui, T. Mizuniwa, M. Abe, and T. Ohmi, “Particle free wafer cleaning and drying technology,” IEEE Trans. Semicond. Manuf., vol. 2, no. 3, pp. 65–75, Aug. 1989.
-
(1989)
IEEE Trans. Semicond. Manuf.
, vol.2
, Issue.3
, pp. 65-75
-
-
Mishima, H.1
Yasui, T.2
Mizuniwa, T.3
Abe, M.4
Ohmi, T.5
-
6
-
-
0025471282
-
Surface active buffered hydrogen fluoride having excellent wettability for ULSI processing
-
Aug.
-
H. Kikuyama, N. Miki, K. Saka, J. Takano, I. Kawanabe, M. Miyashita, and T. Ohmi, “Surface active buffered hydrogen fluoride having excellent wettability for ULSI processing,” IEEE Trans. Semicond. Manuf., vol. 3, no. 3, pp. 99–108, Aug. 1990.
-
(1990)
IEEE Trans. Semicond. Manuf.
, vol.3
, Issue.3
, pp. 99-108
-
-
Kikuyama, H.1
Miki, N.2
Saka, K.3
Takano, J.4
Kawanabe, I.5
Miyashita, M.6
Ohmi, T.7
-
7
-
-
0026105508
-
Principle of wet chemical processing in ULSI microfabrication
-
Feb.
-
—, “ Principle of wet chemical processing in ULSI microfabrication,” IEEE Trans. Semicond. Manuf., vol. 4, no. 1, pp. 26–35, Feb. 1991.
-
(1991)
IEEE Trans. Semicond. Manuf.
, vol.4
, Issue.1
, pp. 26-35
-
-
-
8
-
-
0040184885
-
Growth of native oxide on a silicon surface
-
Aug.
-
M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and M. Ohwada, “Growth of native oxide on a silicon surface,” J. Appl. Phys., vol. 68, no. 3, pp. 1272–1281, Aug. 1990.
-
(1990)
J. Appl. Phys.
, vol.68
, Issue.3
, pp. 1272-1281
-
-
Morita, M.1
Ohmi, T.2
Hasegawa, E.3
Kawakami, M.4
Ohwada, M.5
-
9
-
-
0025506083
-
Improvement of aluminum-Si contact performance in native-oxide-free processing
-
Oct.
-
M. Miyawaki, S. Yoshitake, and T. Ohmi, “Improvement of aluminum-Si contact performance in native-oxide-free processing,” IEEE Electron Device Lett., vol. 11, no. 10, pp. 448–450, Oct. 1990.
-
(1990)
IEEE Electron Device Lett.
, vol.11
, Issue.10
, pp. 448-450
-
-
Miyawaki, M.1
Yoshitake, S.2
Ohmi, T.3
-
10
-
-
0026157889
-
Reduction of fixed-pattern noise of BASIS due to low kinetic energy and native-oxide-free processing
-
May
-
M. Miyawaki and T. Ohmi, “Reduction of fixed-pattern noise of BASIS due to low kinetic energy and native-oxide-free processing,” IEEE Trans. Electron Devices, vol. 38, no. 5, pp. 1037–1043, May 1991.
-
(1991)
IEEE Trans. Electron Devices
, vol.38
, Issue.5
, pp. 1037-1043
-
-
Miyawaki, M.1
Ohmi, T.2
-
11
-
-
0002628462
-
Defects and impurities in Si02 interface for oxides prepared using superclean methods
-
C. R. Helms and B. E. Deal, Eds., New York: Plenum
-
T. Ohmi, M. Morita, and T. Hattori, “Defects and impurities in Si02 interface for oxides prepared using superclean methods,” In C. R. Helms and B. E. Deal, Eds., The Physics and Chemistry of Si02 and the Si-Si02 Interface. New York: Plenum, 1988, pp. 413–419.
-
(1988)
The Physics and Chemistry of Si02 and the Si-Si02 Interface
, pp. 413-419
-
-
Ohmi, T.1
Morita, M.2
Hattori, T.3
-
12
-
-
84941481189
-
Dependence of surface microroughness of CZ, FZ, and EPI wafers on wet chemical process
-
M. Miyashita, M. Makihara, T. Tsuga, and T. Ohmi, “Dependence of surface microroughness of CZ, FZ, and EPI wafers on wet chemical process,” to be submitted to J. Electrochem. Soc.
-
to be submitted to J. Electrochem. Soc
-
-
Miyashita, M.1
Makihara, M.2
Tsuga, T.3
Ohmi, T.4
-
13
-
-
26444504202
-
Particles in ULSI grade chemicals and their adhesion to silicon surfaces
-
Oct.
-
R. Rosenberg, M. Itano, I. Kawanabe, F. W. Kern, Jr., M. Miyashita, and T. Ohmi, “Particles in ULSI grade chemicals and their adhesion to silicon surfaces,” in Proc. Microcontamination 90, Oct. 1990, pp. 273–291.
-
(1990)
Proc. Microcontamination 90
, pp. 273-291
-
-
Rosenberg, R.1
Itano, M.2
Kawanabe, I.3
Kern, F.W.4
Miyashita, M.5
Ohmi, T.6
-
14
-
-
84941457434
-
Particle adhesion and removal in wet cleaning processes for ULSI manufacturing
-
M. Itano, F. W. Kern, Jr., M. Miyashita, I. Kawanabe, R. W. Rosenberg, and T. Ohmi, “ Particle adhesion and removal in wet cleaning processes for ULSI manufacturing,” submitted to IEEE Trans. Semicond. Manuf.
-
submitted to IEEE Trans. Semicond. Manuf
-
-
Itano, M.1
Kern, F.W.2
Miyashita, M.3
Kawanabe, I.4
Rosenberg, R.W.5
Ohmi, T.6
-
15
-
-
84941442928
-
Particle removal from Si wafer surface in wet cleaning process
-
submitted to
-
M. Itano and T. Ohmi, “ Particle removal from Si wafer surface in wet cleaning process, ” submitted to IEEE Trans. Semicond. Manuf.
-
IEEE Trans. Semicond. Manuf
-
-
Itano, M.1
Ohmi, T.2
-
16
-
-
84941486427
-
Effects of Si surface micro-roughness on electrical properties of very thin gate oxide films
-
The Electrochem. Soc., Washington, DC, to be published.
-
M. Morita, A. Teramoto, K. Makihara, and T. Ohmi “Effects of Si surface micro-roughness on electrical properties of very thin gate oxide films,” in Proc. 3rd Int. Symp. on Ultra Large Scale Integration Science and Technology (The Electrochem. Soc., Washington, DC, 1991), to be published.
-
(1991)
Proc. 3rd Int. Symp. on Ultra Large Scale Integration Science and Technology
-
-
Morita, M.1
Teramoto, A.2
Makihara, K.3
Ohmi, T.4
-
17
-
-
0025575633
-
Advanced electron mobility model of MOS inversion layer considering 2D-degenerated electron gas physics
-
M. Ishizaka, T. Iizuka, S. Ohi, M. Fukuma, and H. Mikoshiba, “Advanced electron mobility model of MOS inversion layer considering 2D-degenerated electron gas physics,” in IEDM Tech. Dig., 1990, p. 763.
-
(1990)
IEDM Tech. Dig.
, pp. 763
-
-
Ishizaka, M.1
Iizuka, T.2
Ohi, S.3
Fukuma, M.4
Mikoshiba, H.5
|