C.m.o.s. devices fabricated on buried sio2 layers formed by oxygen implantation into silicon

Electronics Letters

Volumn 14, Issue 18, 1978, Pages 593-594

  Izumi, K ^a   Doken, M ^a   Ariyoshi, H ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Field effect integrated circuits; Ion Implantation

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; SEMICONDUCTOR DEVICES, FIELD EFFECT;

SEMICONDUCTING SILICON;

EID: 0017998279     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19780397     Document Type: Article

References (6)

1. 2 films by oxygen-ion bombardment’, Japan. J. Appl. Phys., 1966, 5, pp. 737-738
2. GUSEV, V. M., GUSEVA, M. I., KURINNYY, V. I., TITOV, V. V., TSYPLENKOV, V. S., BARANOVA, E. K., and STREL'TSOV, L. P.: ‘An investigation of the properties of the oxide film, produced by atomic oxygen ion bombardment of silicon, and its use as a protection for p-n junctions’, Radio Eng. & Electron. Phys., 1971, 16, pp. 1357-1361
3. 2 interface structures and their C-V characteristics’, Thin Solid Films, 1976, 37, pp. 241-248
4. BADAWI, M. H., and ANAND, K. V.: ‘A study of silicon oxides prepared by oxygen implantation into silicon’, J. Phys. D, 1977, 10, pp. 1931-1942
5. 2 films formed by high dose oxygen ion implantation into silicon’, Thin Solid Films, 1977, 42, pp. 227-235
6. DEARNALEY, G., FREEMAN, J. H., NELSON, R. S., and STEPHEN, J.: ‘Ion implantation’ (North-Holland, London, 1973) Appendix 3, pp. 766-777