Properties of Ultra-Thin Wafer-Bonded Silicon-on-Insulator MOSFET’s

IEEE Transactions on Electron Devices

Volumn 38, Issue 6, 1991, Pages 1289-1295

  Caviglia, Anthony L ^c  

^a UNIVERSITY OF MARYLAND   (United States)

^b GEORGE MASON UNIVERSITY   (United States)

^c Allied Signal Aerospace Technology Center ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MANUFACTURE - SILICON ON INSULATOR TECHNOLOGY; SEMICONDUCTOR MATERIALS - CHARGE CARRIERS;

ULTRATHIN MOSFET; WAFER BONDING;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026169342     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.81619     Document Type: Article

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