Interface Characterization of Fully Depleted Soi Mosfet's by the Dynamic Transconductance Technique

IEEE Electron Device Letters

Volumn 12, Issue 8, 1991, Pages 430-432

  Ioannou, Dimitris E ^a   Zhong, Xiaodong ^a   Mazhari, Baquer ^b   Campisi, George J ^b   Hughes, Harold L ^c  

^a GEORGE MASON UNIVERSITY   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS; SEMICONDUCTOR DEVICE MANUFACTURE - SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS - MEASUREMENTS;

DYNAMIC TRANSCONDUCTANCE TECHNIQUE; ENERGY GAP; INTERFACE CHARACTERIZATION; INTERFACE-STATE DENSITY ENERGY PROFILES; SIMOX TRANSISTORS; SOI MOSFET'S;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026202818     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.119155     Document Type: Article

References (12)

1. D. E. Ioannou, X. Zhong, G. J. Campisi, and H. L. Hughes, “Interface characterization in fully depleted SOI MOSFET's by dynamic transconductance,” in Proc. 1990 IEEE SOI/SOS Conf., Oct. 1990, pp. 42-43.
2. D. J. Wouters, M. R. Tack, G. V. Groeseneken, H. E. Maes, and C. L. Claeys, “Characterization of front and back Si-SiO2 interfaces in thick- and thin-film silicon-on-insulator MOS structures by the charge-pumping technique,” IEEE Trans. Electron Devices, vol. 36, pp. 1746–1750, Sept. 1989.
3. H. Haddara and G. Ghibaudo, “Analytical modeling of transfer admittance in small MOSFET's and application to interface state characterization,” Solid-State Electron., vol. 31, pp. 1077–1082, June 1988.
4. E. H. Nicollian and A. Goetzberger, “The Si-SiO2 interface—Electrical properties as determined by the metal-insulator-silicon conductance technique,” Bell Syst. Tech. J., vol. 46, pp. 1055–1133, July 1967.
5. U. Sharma, R. V. H. Booth, and M. H. White, “Static and dynamic transconductance of MOSFET's,” IEEE Trans. Electron Devices, vol. 36, pp. 954–962, May 1989.
6. H. S. Chen and S. S. Li, “Determination of interface state density in small geometry MOSFET's by high-low-frequency transconductance method,” IEEE Electron Device Lett., vol. 12, pp. 13–15, Jan. 1991.
7. H. Haddara, T. Elewa, and S. Cristoloveanu, “Static and dynamic transconductance model for depletion-mode transistor: A new characterization method for silicon-on-insulator materials,” IEEE Electron Device Lett., vol. 9, pp. 35–37, Jan. 1988.
8. T. Elewa, H. Haddara, and S. Cristoloveanu, “Interface properties and recombination mechanisms in SIMOX structures,” in The Physics and Technology of Amorphous SiO2, A. B. Devine, Ed. New York: Plenum, 1988, pp. 553–559.
9. H. K. Lim and J. G. Fossum, “Threshold voltage of thin-film silicon-on-insulator ‘SOI’ MOSFET's,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1244–1251, Oct. 1983.
10. D. J. Wouters, J. P. Colinge, and H. E. Maes, “Subthreshold slope in thin-film SOI MOSFET's,” IEEE Trans. Electron Devices, vol. 37, pp. 2022–2033, Sept. 1990.
11. E. H. Nicollian and J. R. Brews, MOS Physics and Technology. New York: Wiley, 1982, p. 92.
12. M. A. Guerra, “The status of SIMOX technology,” Electrochem. Soc. Proc, vol. 90-6, pp. 21–47, May 1990.