Dry etch selectivity of Gd2O3 to GaN and AlN

Journal of Electronic Materials

Volumn 29, Issue 3, 2000, Pages 285-290

  Hays, D C ^a   Lee, K P ^a   Gila, B P ^a   Ren, F ^a   Abernathy, C R ^a   Pearton, S J ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; ARGON; DIELECTRIC MATERIALS; DRY ETCHING; GADOLINIUM COMPOUNDS; ION BOMBARDMENT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR PLASMAS; XENON;

DRY ETCH SELECTIVITY;

SEMICONDUCTING FILMS;

EID: 0033894187     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0064-x     Document Type: Article

References (26)

1. M. Hong, M. Passlack, J.P. Mannaerts, J. Kwo, S.N.G. Chu, N. Moriya, S.Y. Hou, and V.J. Fratello, J. Vac. Sci. Technol. B14, 2297 (1996).
2. M. Passlack, M. Hong, J.P. Mannaerts, J. Kwo, R.L. Opila, S.N.G. Chu, N. Moriya, and F. Ren, IEEE Trans. Electron. Dev. 44, 214 (1997).
3. F. Ren, M. Hong, W.S. Hobson, J.M. Kwo, J.R. Lothian, J. Kwo, Y.K. Chen, and A.Y. Cho, Solid State Electron. 41, 1751 (1997).
4. F. Ren et al., IEEE Electron. Dev. Lett. 19, 309 (1998).
5. Y.C. Wang, M. Hong, J.M. Kuo, J.P. Mannaerts, J. Kwo, H.S. Tsai, J.J. Krajewski, Y.K. Chen, and A.Y. Cho, IEEE IEDM Tech Dig. 212, 67 (1998).
6. M. Passlack, M. Hong, J.P. Mannaerts, and L.W. Tu, Appl. Phys. Lett. 68, 3605 (1996).
7. A.R. Kortran, M. Hong, J. Kwo, J.P. Mannaerts, and N. Kopylov, Mat. Res. Soc. Symp. Proc. 573, 21 (1999).
8. M. Hong, J.P. Mannaerts, M.A. Marcus, J. Kwo, A.M. Sergent, L.J. Chen, K.C. Hsieh, and K.Y. Cheng, J. Vac. Sci. Technol. B 16, 1395 (1998).
9. M. Hong, J. Kwo, A.R. Korkon, J.P. Mannaerts, and A.M. Sergeant, Science 283, 1897 (1999).
10. J. Kwo, M. Hong, A.R. Kortran, D.W. Murphy, J.P. Mannaerts, A.M. Sergent, Y.C. Wang, and K.C. Hsieh, Mat. Res. Soc. Symp. Proc. 573, 57 (1999).
11. T.S. Lay, M. Hong, J. Kwo, J.P. Mannaerts, W.H. Hung, and D.J. Huang, Mat. Res. Soc. Symp. Proc. 573, 131 (1999).
12. M. Passlack, M. Hong, and J.P. Mannaerts, Appl. Phys. Lett. 68, 1099 (1996).
13. M. Hong, F. Ren, J.M. Kwo, W.S. Hobson, J. Kwo, J.P. Mannaerts, J.R. Lothian, and Y.K. Chen, J. Vac. Sci. Technol. B 16, 1398 (1998).
14. Y.C. Wang, M. Hong, J.M. Kwo, J.P. Mannaerts, J. Kwo, H.S. Tsai, J.J. Krajewski, J.S. Weiner, Y.K. Chen, and A.Y. Cho, Mat. Res. Soc. Symp. Proc. 573, 219 (1999).
15. B. Gila, K.N. Lee, J.R. Laroche, F. Ren, S.M. Donovan, C.R. Abernathy, and J. Han, Mat. Res. Soc. Symp. Proc. 573, 247 (1999).
16. F. Ren, M. Hong, S.N.G. Chu, M.A. Marcus, M.J. Schurmann, A.G. Baca, S.J. Pearton, and C.R. Abernathy, Appl. Phys. Lett. 73, 3893 (1998).
17. F. Ren, S.J. Pearton, C.R. Abernathy, A.G. Baca, P. Cheng, R.J. Shul, S.N.G. Chu, M. Hong, M.J. Schurmann, and J.R. Lothian, Solid-State Electron. 43, 1681 (1999).
18. S.D. Wolter, B.P. Luther, D.L. Waltenyer, J.M. DeLucca, S.E. Mohney, and R.J. Molnar, Appl. Phys. Lett. 70, 2156 (1997).
19. S.D. Wolter, S.E. Mohney, H. Venugopalan, A.E. Wickenden, and D.D. Koleske, J. Electrochem. Soc. 145, 629 (1998).
20. E.D. Readenger, S.D. Wolter, D.L. Waltenyer, J.M. DeLucca, S.E. Mohney, B.I. Prenitzer, L.A. Giannuzzi, and R.J. Molnar, J. Electron. Mater. 28, 257 (1999).
21. F. Ren, M. Hong, J.P. Mannaerts, J.R. Lothian, and A.Y. Cho, J. Electrochem. Soc. 144, L239 (1997).
22. J.M. Van Hove, R. Hickman, J.J. Klaasson, P.P. Chow, and P.D. Ruden, Appl. Phys. Lett. 70, 282 (1997).
23. C.R. Abernathy, Mat. Sci. Eng. Rep. R14, 203 (1995).
24. S.J. Pearton, J.C. Zolper, R.J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999).
25. C.R. Eddy, Jr., Proc. Electrochem. Soc. 98-18, 169 (1999).
26. I. Adesida, Properties, Processing and Applications of GaN and Related Semiconductors, ed. J.H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel (London: IEE-Inspec, 1999).