Energy band offsets at a ga2o3(gd2o3)-gaas interface

Materials Research Society Symposium - Proceedings

Volumn 573, Issue , 1999, Pages 131-135

  Lay, T S ^a,c   Hong, M ^a   Kwo, J ^b   Mannaerts, J P ^b   Hung, W H ^b   Huang, D J ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b LUCENT TECHNOLOGIES   (United States)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); MOS DEVICES; PLATINUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

FOWLER-NORDHEIM TUNNELING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032638466     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-573-131     Document Type: Article

References (8)

1. M. Hong, M. Passlack, J. P. Mannerts, J. Kwo, S. N. G. Chu, N. Moriya, S. Y. Hou, and V. J. Fratello, J. Vac. Sei. Technol. B14,2297 (1996).
2. M. Hong, F. Ren, J. M. Kuo, W. S. Hobson, J. Kwo, J. P. Mannaerts, J. R. Lothian, and Y. K. Chen, J. Vac. Sei. Technol. B16, 1398 (1998).
3. F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, Y. K. Chen, and A. Y. Cho, IEDM technical digest, 943 (1996).
4. M. Hong, J. P. Mannaerts, M. A. Marcus, J. Kwo, A. M. Sergent, L. J. Chou, K. C. Hsieh, and K. Y. Cheng, J. Vac. Sei. Technol. B16,1395 (1998).
5. R.S. Muller, and T.I. Kamins, Device electronics for integrated circuits, (John Wiley & Sons, New York, 1977), p. 32.
6. G. Lewwicki and J. Maserjian, J. Appl. Phys., 46, 3032 (1975).
7. S.M. Sze, Physics of semiconductor devices, 2nd ed., (John Wiley & Sons, New York, 1981), p. 403.
8. The Ga 3d binding energy, which is associated with Ga2Oj, is ~2eV higher than that of GaAs. Handbook of x-ray photoelectron spectroscopy (Perkin-Elmer Corporation, Eden Prairie, 1992).