Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiation

IEEE Transactions on Electron Devices

Volumn 47, Issue 3, 2000, Pages 650-652

  Ling, C H ^a   Ang, C H ^a   Ang, D S ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GATES (TRANSISTOR); LEAKAGE CURRENTS; NITROGEN;

X RAY IRRADIATION;

MOSFET DEVICES;

EID: 0033890734     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.824744     Document Type: Article

References (24)

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