A Model for Radiation Induced Edge Leakage in Bulk Silicon NMOS Transistors

IEEE Transactions on Nuclear Science

Volumn 39, Issue 6, 1992, Pages 1947-1952

  Jacunski, Mark D ^a   Peckerar, Martin C ^b  

^a WESTINGHOUSE ELECTRIC COMPANY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009200471     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.211390     Document Type: Article

References (10)

1. T.P. Ma and P.V. Dressendorfer, eds., Ionizing Radiation Effects in MOS Devices and Circuits, New York: John Wiley and Sons, 1989, pp. 87–332.
2. M.C. Peckerar et al., “Modeling Total Dose Effects in Narrow Channel Devices,” IEEE Trans. Elec. Dev., ED-30, pp. 1159–64, Sept. 1983.
3. T.R. Oldham et al., “Post-Irradiation Effects in Field Oxide Isolation Structures,” IEEE Trans. Nucl. Sci., NS-34, pp. 1184–89, Dec. 1987.
4. M.D. Jacunski, “A Comparison of the Radiation Characteristics of LOCOS, ROX, and Moat Field Isolation,” University of Maryland, College Park, MD, M.S. Thesis, 1991.
5. S.M. Sze, Physics of Semiconductor Devices, New York: John Wiley and Sons, 1981, pp. 366–79.
6. R.S. Muller and T.I. Kamins, Device Electronics for Integrated Circuits 2nd ed., New York: John Wiley and Sons, 1986, pp. 392–405.
7. F.B. McLean, “A Framework for Understanding Radiation Induced Interface States in SiO2 MOS Structures,” IEEE Trans. Nucl. Sci., NS-27, pp. 1651–57, Dec. 1980.
8. C.M. Dozier and D.B. Brown, “Effect of Photon Energy on the Response of MOS Devices,” IEEE Trans. Nucl. Sci., NS-28, pp. 4137–41, Dec. 1981.
9. H.E. Boesch, Jr. et al., “Saturation of Threshold Voltage Shift in MOSFETs at High Total Dose,” IEEE Trans. Nucl. Sci., NS-33, pp. 1191–97, Dec. 1086.
10. M.D. Jacunski et al., “A Radiation Hardened Gate Array for Space Applications,” in The Government Microcircuit Applications Conference Digest of Papers, Las Vegas, NV, November 1988, pp. 83–86.