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Volumn 56, Issue 14, 1990, Pages 1329-1331
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Neutral electron trap generation in SiO2 by hot holes
a a a
a
NTT CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0000287106
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.103200 Document Type: Article |
Times cited : (40)
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References (16)
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