Reliability Effects of X-Ray Lithography Exposures on Submicron-Channel MOSFETs

IEEE Transactions on Nuclear Science

Volumn 40, Issue 6, 1993, Pages 1367-1371

  Lelis, Aivars J ^a   Oldham, Timothy R ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON TRANSPORT PROPERTIES; HOT CARRIERS; RADIATION EFFECTS; RELIABILITY; SIMULATION; STRESSES; X RAY LITHOGRAPHY;

CHARGE TRAPPING; INTERFACE TRAPS; SUBMICRON CHANNEL LENGTH;

MOSFET DEVICES;

EID: 0027853287     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273530     Document Type: Article

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