Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics

IEEE Transactions on Electron Devices

Volumn 43, Issue 9, 1996, Pages 1467-1470

  Ramgopal Rao, V ^a   Sharma, D K ^b   Vasi, J ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS; DIELECTRIC MATERIALS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); RADIATION HARDENING; SEMICONDUCTOR DEVICE MODELS;

NEUTRAL ELECTRON TRAP (NET); REOXIDIZED NITRIDED OXIDE DIELECTRICS;

DIELECTRIC DEVICES;

EID: 0030242331     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.535335     Document Type: Article

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