Effects of X-Ray Irradiation on GIDL in MOSFET's

IEEE Electron Device Letters

Volumn 13, Issue 4, 1992, Pages 189-191

  Acovic, Alexandre ^a   Hsu, Charles Ching Hsiang ^a   Hsia, Liang Choo ^b   Balasinski, Artur ^c   Ma, Tso Ping ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM   (United States)

^c YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

X-RAYS--EFFECTS;

ELECTROSTATIC EFFECT; GATE-INDUCED DRAIN LEAKAGE (GIDL); INTERFACE-STATE-ASSISTED TUNNELING COMPONENT; N-CHANNEL MOSFET'S; P-CHANNEL MOSFET'S;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026853304     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.145016     Document Type: Article

References (15)

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