X-Ray Lithography Effects on MOS Oxides

IEEE Transactions on Nuclear Science

Volumn 39, Issue 6, 1992, Pages 2204-2210

  Lelis, A J ^a   Oldham, T R ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038766026     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.211422     Document Type: Article

References (42)

1. F.B. McLean, H. E. Boesch and T. R. Oldham, “Electron-Hole Generation, Transport, and Trapping in SiO2,” Chapter 3 of Ionizing Radiation Effects in MOS Devices and Circuits, T. P. Ma and P. V. Dressendorfer, eds, Wiley Interscience, New York (1989).
2. P. S. Winokur, “Radiation-Induced Interface Traps,” Chapter 4 of Ionizing Radiation Effects in MOS Devices and Circuits, T. P. Ma and P. V. Dressendorfer, eds, Wiley Interscience, New York (1989).
3. T. R. Oldham, F. B. McLean, H. E. Boesch, and J. M. McGarrity, An Overview of Radiation-Induced Interface Traps in MOS Structures, Semiconductor Science and Technology, 4, 986 (1989).
4. B. E. Deal, M. Sklar, A. S. Grove, and E. H. Snow, Characteristics of the Surface-State Charge (Q ss) of Thermally Oxidized Silicon, J. Electrochem. Soc., 114, 267 (1967).
5. P. V. Dressendorfer, “Radiation-HardeningTechnology,” Chapter 6 of IonizingRadiation Effects in MOS Devices and Circuits, T. P. Ma and P. V. Dressendorfer, eds, Wiley Interscience, New York (1989).
6. J. M. Aitken, D. R. Young, and K. Pan, Electron Trapping in Electron-Beam Irradiated SiO2, J. Appl. Phys., 49, 3386–3391 (1978).
7. J. M. Aitken and D. R. Young, Electron Trapping by Radiation-Induced Charge in MOS Devices, J. Appl. Phys., 47, 1196–1198 (1976).
8. A. Reisman, J. M. Aitken, A. K. Ray, M. Berkenblit, C. J. Merz, and R. P. Havrekik, On the Removal ofInsulator Process Induced Radiation Damage from Insulated Gate Field Effect Transistors at Elevated Pressure, J. Electrochem. Soc., 128, 1616 (1981).
9. A. Reisman and C. J. Metz, The Effects of Pressure, Temperature, and Time on the Annealing of Ionizing Radiation Induced Insulator Damage in N-channel IGFETs, J. Electrochem. Soc., 130, 1384–1390 (1983).
10. A. Reisman, C. K. Williams, and J. R. Maldonado, Generation and Annealing of Defects in Silicon Dioxide, J. Appl. Phys., 62, 868 (1987).
11. A. Reisman, C. J. Merz, J. R. Maldonado, and W. W. Molzen, Low Energy X-Ray and Electron Damage to IGFET Gate Insulators, J. Electrochem. Soc., 131, 1404 (1987).
12. D. R. Young, E. A. Irene, D. J. DiMaria, R. F. DeKeersmaecker, and H. Z. Massoud, Electron Trapping in SiO 2 at 295and 77°K, J. Appl. Phys., 50, 6366 (1979).
13. C. K. Williams, A. Reisman, P. Bhattacharya, and W. Ng, Defect Generation in Silicon Dioxide from Soft X-Ray Synchrotron Radiation, J. Appl. Phys., 64, 1145 (1988).
14. M. Walters and A. Reisman, Radiation-Induced Neutral Electron Trap Generation in Electrically Biased Insulated Gate Field Effect Transistor Gate Insulators, J. Electrochem. Soc., 138, 2756–2762 (1991).
15. A. J. Lelis, T. R. Oldham, and W. M. DeLancey, Response of Interface Traps During High-Temperature Annealing, IEEE Trans. Nucl. Sci., NS-38, 1590–1597 (1991).
16. P. M. Lenahan and P. V. Dressendorfer, Hole Traps and Trivalent Silicon Centers in Metal/Oxide/Silicon Devices, J. Appl. Phys., 55, 3495 (1984).
17. T. R. Oldham, A. J. Lelis, and F. B. McLean, Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing, IEEE Trans. Nucl. Sci., NS-33, 1203–1209 (1986).
18. A. J. Lelis, H. E. Boesch, Jr., T. R. Oldham, and F. B. McLean, Reversibility of Trapped Hole Annealing, IEEE Trans. Nucl. Sci., NS-35, 1186–1191 (1988).
19. A. J. Lelis, T. R. Oldham, H. E. Boesch, Jr., and F. B. McLean, The Nature of the Trapped Hole Annealing Process, IEEE Trans. Nucl. Sci., NS-36, 1808–1815 (1989).
20. P. J. McWhorter, S. L. Miller, and W. M. Miller, Modeling the Anneal of Radiation-Induced Trapped Holes in a Varying Thermal Environment, IEEE Trans. Nucl. Sci., NS-37, 1682 (1990).
21. Z. Shanfield, Thermally Stimulated Current Measurements on Irradiated MOS Capacitors, IEEE Trans. Nucl. Sci., NS.30, 4064 (1983).
22. D. M. Fleetwood, R. A. Reber, and P. S. Winokur, Effect of Bias on Thermally Stimulated Current (TSC) in Irradiated MOS Devices, IEEE Trans. Nucl. Sci., NS-38, 1066 (1991).
23. F. J. Feigl, W. B. Fowler, and K. L. Yip, Oxygen Vacancy Model for the E 1 ' Center in SiO 2, Solid State Commun., 14, 225 (1974).
24. J. R. Schwank, P. S. Winokur, P. J. McWhorter, F. W. Sexton, P. V. Dressendorfer, and D. C. Turpin, Physical Mechanisms Contributing to Device “Rebound,” IEEE Trans. Nucl. Sci., NS-31, 1434 (1984).
25. C. M. Dozier, D. B. Brown, J. L. Throckmorton, and D. I. Ma, Defect Production in SiO 2 by X-Ray and Co-60 Radiations, IEEE Trans. Nucl. Sci., NS-32, 4363 (1985).
26. J. Lakshamanna and A. S. Vengurlekar, Logarithmic Detrapping Response for Holes Injected into SiO 2 and the Influence of Thermal Activation and Electric Fields, J. Appl. Phys., 63, 4548 (1988).
27. M. V. Fischetti, R. Gastaldi, F. Maggione, and A. Madelli, Positive Charge Effects on the Flatband Voltage Shift During Avalanche Injection on Al-SiO 2-Si Capacitors, J. Appl. Phys., 53, 3129 (1982).
28. G. A. Brown, Z. Shanfield, A. G. Revesz, M. Moriwaki, and H. L. Hughes, J. Radiat. Eff. Res. Eng., 7 (No. 1), 31 (1989).
29. A. G. Sabnis and J. T. Nelson, APhysicalModel for Degradation of DRAMs During Accelerated Stress Aging, Int. Reliability Phys. Symp. Proc., 90–95 (1983).
30. S. E. Thompson and T. Nishida, Tunneling and Thermal Emission of Electrons from a Distribution of Shallow Traps in SiO 2, Appl. Phys. Lett., 58, 1262 (1991).
31. T. C. Ong, M. Levi, P. K. Ko, and C. Hu, Recovery of Threshold Voltage after Hot-Carrier Stressing, IEEE Trans. Electron Devices, ED-35, 978 (1988).
32. T. H. Ning, P. W. Cook, R. H. Dennard, C. M. Osburn, S. E. Schuster, and H.-N. Yu, 1 μm MOSFET VLSI Technology: Part IV—Hot-Electron Design Constraints, IEEE Trans. Electron Devices, ED-26, 346–352 (1979).
33. P. E. Cottrell, R. R. Troutman, and T. H. Ning, Hot-Electron Emission in N-channel IGFETs, IEEE Trans. Electron Devices, ED-26, 520–533 (1979).
34. S. A. Abbas and R. C. Dockerty, Hot-Carrier Instability in IGFETs, Appl. Phys. Lett., 27, 147–148 (1975).
35. T. H. Ning, C. M. Osburn, and H.-N. Yu, Threshold Instability in IGFETs Due to Emission of Leakage Electrons from Silicon Substrate into Silicon Dioxide, Appl. Phys. Lett., 29, 198–200 (1976).
36. F.-C. Hsu and S. Tam, Relationship Between MOSFET Degradation and Hot-Electron-Induced Interface-State Generation, IEEE Electron Dev. Lett., EDL-5, 50–52 (1984).
37. J. D. McBrayer, D. M. Fleetwood, R. A. Pastorek, and R. V. Jones, Correlation of Hot-Carrier and Radiation Effects in MOS Transistors, IEEE Trans. Nucl. Sci., NS-32, 3935–3939 (1985).
38. J. Y.-C. Sun, J. R. Maldonado, M. D. Rodriguez, J. Laskar, and D. S. Zicherman, Effects of X-Ray Irradiation on the Channel Hot-Carrier Reliability of Thin-Oxide n-Channel MOSFETs, Ext. Abst. 18th (Intl) Conf. Solid State Dev. Mater. (Tokyo), 479–482 (1986).
39. C. C.-H. Hsu, L. K. Wang, M. R. Wordeman, and T. H. Ning, Hot - ElectronInduced Instability in O.5-μm p-Channel MOSFETs Patterned Using Synchrotron X-Ray Lithography, IEEE Electron Dev. Lett., EDL-10, 327–329 (1989).
40. C. C.-H. Hsu, L. K. Wang, J. Y.-C. Sun, M. R. Wordeman, and T. H. Ning, Radiation Damage and its Effect on Hot-Electron Induced Instability of 0.5-μm CMOS Devices Patterned Using Synchrotron X-Ray Lithography, J. Electron. Mater., 19, 721–725 (1990).
41. P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. C. Turpin, Correlating the Radiation Response of MOS Capacitors and Transistors, IEEE Trans. Nucl. Sci., NS-31, 1453–1460 (1984).
42. T. H. Ning, Thermal Reemission of Trapped Electrons in SiO 2, J. Appl. Phys., 49, 5997–6003 (1978).