Impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films

Journal of Electronic Materials

Volumn 28, Issue 3, 1999, Pages 301-307

  Wickenden, A E ^a   Koleske, D D ^a   Henry, R L ^a   Gorman, R J ^a   Culbertson, J C ^a   Twigg, M E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ELECTRON TRANSPORT PROPERTIES; FILM GROWTH; GRAIN SIZE AND SHAPE; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NITRIDES; NUCLEATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

GALLIUM NITRIDE; HALL TRANSPORT MEASUREMENT;

SEMICONDUCTING FILMS;

EID: 0032634985     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0031-0     Document Type: Article

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