Anode hole injection and stress induced leakage current decay in metal-oxide-semiconductor capacitors

Solid-State Electronics

Volumn 44, Issue 4, 2000, Pages 623-630

  Meinertzhagen, A ^a   Petit, C ^a   Jourdain, M ^a   Mondon, F ^b  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POTENTIAL; ELECTRON TUNNELING; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

HOLE INJECTION; STRESS INDUCED LEAKAGE CURRENT DECAY;

MOS CAPACITORS;

EID: 0033882741     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00309-3     Document Type: Article

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