Effect of the discharging and recharging of the stress generated oxide charge in metal-oxide-semiconductor capacitors on the low field leakage current

Microelectronics Reliability

Volumn 38, Issue 2, 1998, Pages 221-225

  Meinertzhagen, A ^a   Petit, C ^a   Yard, G ^a   Jourdain, M ^a   Mondon, F ^b  

^a UFR Sciences   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISCHARGES; GATES (TRANSISTOR); LEAKAGE CURRENTS;

STRESS RECHARGING;

MOS CAPACITORS;

EID: 0031995337     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00034-6     Document Type: Article

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