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Physical Review B

Volumn 41, Issue 14, 1990, Pages 9836-9842

Model based on trap-assisted tunneling for two-level current fluctuations in submicrometer metalsilicon-dioxidesilicon diodes

(4) Andersson, M O a Xiao, Z a Norrman, S a Engstrom O a

a CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000313253 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.41.9836 Document Type: Article

Times cited : (42)

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