SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 9, Issue 5, 1994, Pages 989-1004

Reliability of thin SiO2

(2) Schuegraf, K F a Hu, Chenming a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUILT IN OXIDE RELIABILITY; DEFECT FREE THIN SILICA; FOWLER NORDHEIM TUNNELING; GATE ELECTRON EMISSION; INTRINSIC BREAKDOWN LIFETIME; INTRINSIC HOLE INDUCED BREAKDOWN; OXIDE WEAR OUT; POLYSILICON DEPLETION; SUBSTRATE ELECTRON EMISSION;

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON EMISSION; ELECTRON TUNNELING; FAILURE ANALYSIS; LEAKAGE CURRENTS; QUALITY ASSURANCE; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE TESTING; THERMAL EFFECTS; WEAR OF MATERIALS;

SILICA;

EID: 0028425839 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/9/5/002 Document Type: Review

Times cited : (102)

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