Dielectric breakdown mechanism of thin-SiO2 studied by the post-breakdown resistance statistics

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 61-62

  Satake, H ^a   Toriumi, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION THEORY; ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; MOS DEVICES;

DIELECTRIC BREAKDOWN MECHANISM; OXIDE FIELD DEPENDENCE; POST BREAKDOWN RESISTANCE DISTRIBUTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033280989     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)