Numerical Analysis of Alpha-Particle-Induced Soft Errors in SOI MOS Devices

IEEE Transactions on Electron Devices

Volumn 39, Issue 5, 1992, Pages 1184-1190

  Iwata, Hideyuki ^a   Ohzone, Takashi ^a  

^a TOYAMA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALPHA PARTICLES; INTEGRATED CIRCUITS, VLSI - DESIGN;

DEVICE SIMULATION; MOS DEVICES; SILICON ON INSULATOR DEVICES; SOFT ERRORS; VLSI DESIGN;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026866625     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.129101     Document Type: Article

References (9)

1. S. E. Kerns, L. W. Massengill, D. V. Kerns, Jr., M. L. Alles, T. W. Houston, H. Lu, and L. R. Hite, “Model for CMOS/SOI single-event vulnerability,” IEEE Trans. Nucl. Sci., vol. 36, pp. 2305–2310, 1989.
2. J. Chem, P. Yang, P. Pattnaik, and J. S. Seitchik, “Alpha-particle-induced charge transfer between closely spaced memory cells,” IEEE Trans. Electron Devices, vol. ED-33, pp. 823–834, 1986.
3. D. Hisamoto, T. Toyabe, and E. Takeda, “Alpha-particle-induced source-drain penetration (ALPEN) effects—A new soft error phenomenon,” in Proc. Solid State Devices and Materials Conf. (Tokyo), 1987, pp. 39–42.
4. K. Takeuchi, M. Aoki, E. Kume, Y. Watanabe, T. Kaga, and K. Itoh, “Alpha-particle-induced charge transfer between n + regions in high-density trench DRAM with isolated p-well structures,” IEEE Trans. Electron Devices, vol. 37, pp. 1893–1901, 1990.
5. J. W. Slotboom and H. C. DeGraaf, “Measurements of bandgap narrowing in Si bipolar transistors,” Solid-State Electron., vol. 19, pp. 857–862, 1976.
6. H. C. Bennet, “Improved concepts for predicting the electrical behavior of bipolar structures in silicon,” IEEE Trans. Electron Devices, vol. ED-32, pp. 920–927, 1983.
7. H. B. Smith, Ion Implantation Range Data for Silicon and Germanium Device Technologies. New York: Learned Information (Europe), 1977.
8. A. S. Grove, Physics and Technology of Semiconductor Devices. New York: Wiley, 1967, p. 217.
9. S. Selberherr, Analysis and Simulation of Semiconductor Devices. New York: Springer, 1984, p. 106.