SCOPUS 정보 검색 플랫폼

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2291-2296

Improvement of Radiation Hardness in Fully-Depleted SOI N MOSFETs Using Geimplantation

(6) Wei, H a Chung, James E a Kalkhoran, Nader M b Namavar, Fereydoon b Annamalai, N K c Shedd, Walter M c

a MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

b SPIRE CORPORATION (United States)

c PL/VTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; CRYSTAL DEFECTS; ELECTRIC CURRENT MEASUREMENT; INTERFACES (MATERIALS); ION IMPLANTATION; LEAKAGE CURRENTS; RADIATION EFFECTS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON ON INSULATOR TECHNOLOGY; VOLTAGE MEASUREMENT;

FRONT CHANNEL THRESHOLD VOLTAGE; OFF STATE LEAKAGE; RADIATION HARDNESS; SUBGAP ENERGY STATES;

MOSFET DEVICES;

EID: 0028697656 PISSN: 00189499 EISSN: 15581578 Source Type: Journal
DOI: 10.1109/23.340578 Document Type: Article

Times cited : (9)

References (7)

1
- 0023592584
- Total dose hardening of buried insulator in implanted silicon-on-insulator structures
- B. Y Mao, C.E Chen, G. Pollack, H. L. Hughes, and G. E. Davis, “Total dose hardening of buried insulator in implanted silicon-on-insulator structures,” IEEE Trans. Nucl. Sci., vol.NS34, no.6, pp.1692-97, 1987.
- (1987) IEEE Trans. Nucl. Sci. , vol.NS34 , Issue.6 , pp. 1692-1697
- Mao, B.Y.¹ Chen, C.E.² Pollack, G.³ Hughes, H.L.⁴ Davis, G.E.⁵

2
- 84939703575
- Zone melting recrystallized silicon-on-diamond
- Feb.
- N. K. Annamalai, “Zone melting recrystallized silicon-on-diamond,” U.S. Patent 5,186,785, Feb. 1993.
- (1993) U.S. Patent 5,186,785
- Annamalai, N.K.¹

3
- 0027891680
- Improvement of breakdown voltage and off-state leakage in Geimplanted SOI N MOSFETs
- H. F. Wei, N. M. Kalkhoran, F. Namavar, and J. E. Chung, “Improvement of breakdown voltage and off-state leakage in Geimplanted SOI N MOSFETs,” Tech. Digest of IEDM, pp.739-742, 1993.
- (1993) Tech. Digest of IEDM , pp. 739-742
- Wei, H.F.¹ Kalkhoran, N.M.² Namavar, F.³ Chung, J.E.⁴

4
- 84930093399
- IDefect reduction and defect engineering in silicon-on-sapphire on-sapphire material using Ge implantation
- F. Namavar, E. Cortesi, N. M. Kalkhoran, J. M. Manke, and B. Buchanan, “Defect reduction and defect engineering in silicon-on-sapphire on-sapphire material using Ge implantation,” Mat. Res. Soc. Symp. Proc., vol.201, pp.337-342, 1991.
- (1991) Mat. Res. Soc. Symp.Proc , vol.201 , pp. 337-342
- Namavar, F.¹ Cortesi, E.² Kalkhoran, N.M.³ Manke, J.M.⁴ Buchanan, B.⁵

5
- 0001670608
- Back channel degradation and device material improvement by Ge implantation
- F. Namavar, B. Buchanan, E. Cortesi, and P. Sioshansi, “Back channel degradation and device material improvement by Ge implantation,” Mat. Res. Soc. Symp. Proc., vol.147, pp.235-240, 240, 1989.
- (1989) Mat. Res. Soc. Symp. Proc , vol.147 , pp. 235-240
- Namavar, F.¹ Buchanan, B.² Cortesi, E.³ Sioshansi, P.⁴

6
- 0020761607
- Silicon-on-insulator bipolar transistors
- June
- M. Rodder and D. A. Antoniadis, “Silicon-on-insulator bipolar transistors,” IEEE Elect. Dev. Lett., vol.EDL-4, no.6, pp.193-195, June 1983.
- (1983) IEEE Elect. Dev. Lett , vol.EDL-4 , Issue.6 , pp. 193-195
- Rodder, M.¹ Antoniadis, D.A.²

7
- 0025430219
- Modes of operation of ultrathin SOI transistors
- May
- D. C. Mayer, “Modes of operation of ultrathin SOI transistors,” IEEE Trans. Elect. Dev., vol.ED-37, no.5, p.1280, May 1990.
- (1990) IEEE Trans. Elect. Dev. , vol.ED-37 , Issue.5 , pp. 1280
- Mayer, D.C.¹

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