Elimination of bipolar-induced breakdown in fully-depleted SOI MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 337-340

  Ver Ploeg, E P ^a   Watanabe, T ^a,b   Kistler, N A ^a,c   Woos, J C S ^a,c   Plummer, J D ^a  

^a STANFORD UNIVERSITY   (United States)

^b TOSHIBA CORPORATION   (Japan)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; SILICON ON INSULATOR TECHNOLOGY;

DUAL SOURCE; FULLY DEPLETED SOI; N-CHANNEL; NEW DEVICES; PARASITIC BJT; SIMULATED RESULTS; SOI-MOSFETS;

MOSFET DEVICES;

EID: 33748011095     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307373     Document Type: Conference Paper

References (9)

1. Jean-Pierre Colinge and T. I. Kamins, "CMOS circuits made in thin SIMOX films" Elect. Lett., v. 23, pp. 1162-4, October 1987.
2. James C. Sturm, K. Tokunaga, and J-P. Colinge, "Increased drain saturation current in ultra-thin silicon-on-insulator (SOI) MOS transistors, " IEEE Elect. Dev. Lett., EDL-9, pp. 460-3, September 1988.
3. Nobuo Sasaki, T. Inaba, M. Nakano, and Y. Kobayashi, Japanese patent. Patent application number 50-71638, 1975.
4. Jian Chen, R. Solomon, T-Y. Chan, P-K Ko and C. Hu, "A CV Technique for Measuring thin SOI film thickness, " IEEE Elect. Dev. Lett., EDL-12, pp. 453-5, August 1991.
5. Jerry G. Fossum, J-Y. Choi, and P-C. Yeh, "Unique problems, and possible solutions in fully depleted SOI CMOS VLSI circuits, " IEEE Inter. SOI Conf., pp. 158-9, 1991.
6. Susan P. Edwards, K. J. Yallup, K. M. De Meyer, "Two-dimensional analysis of the floating region in SOI MOSFET's, " IEEE Trans. Elect. Dev., ED-35, pp. 1012-20, July 1988.
7. Jin-Young Choi, J. G. Fossum, "Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFETs, " IEEE Trans. Elect. Dev., ED-38, pp. 1384-91, June 1991.
8. Scott M. Tyson, and R. W. Gallegos, "Salicided source/drain considerations on UTF SIMOX, " IEEE Inter. SOI Conf., pp. 66-7, 1991.
9. Yasuhisa Omura and K. Izumi, "Simplified analysis of body-contact effect forMOSFET/SOI, "IEEE Trans. Elect. Dev., ED-35, pp. 1391-3, August 1988