An SEU Resistant 256K SOI SRAM

IEEE Transactions on Nuclear Science

Volumn 39, Issue 6, 1992, Pages 2121-2125

  Hite, L R ^a   Lu, H ^a   Houston, T W ^a   Hurta, D S ^a   Bailey, W E ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84939723667     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.211411     Document Type: Article

References (6)

1. G.E. Davis, L.R. Hite, T.G.W. Blake, C.E. Chen, and H.W. Lam, “Transient Radiation Effects in SOI Memories,” IEEE Trans. Nucl. Sci., Vol. NS-32, p. 4432, 1985.
2. S.E. Kerns, L.W. Massengill, D.V. Kerns, Jr., M.L. Alles, T.W. Houston, H. Lu, and L.R. Hite, “Model for CMOS/SOI Single-Event Vulnerability,” IEEE Trans. Nucl. Sci., Vol. NS-36 p. 2305, 1989.
3. T.W. Houston, T.G.W. Blake, L.R. Hite, and H. Lu, “Achieving a High Upset Threshold Through Cell Design and Memory Retention Screening,” J. Rad. Effects, Res. & Eng., Vol. 10, No., 1, p. 56, December, 1991.
4. J.A. Zoutendyk, L.S. Smith, G.A. Soli, P. Thieberger, and H.E. Wegner, “Single-Event Upset (SEU) Model Verification and Threshold Determination Using Heavy Ions in a Bipolar Static RAM,” IEEE Trans. Nucl. Sci., Vol. NS-32, p. 4164, 1985.
5. P. Shapiro and EL. Petersen, “Calculation of Cosmic Ray Induced Soft Upsets and Scaling in VLSI Devices,” NRL Memorandum Report 4684, August 26, 1982.
6. G.C. Messenger, “Collection of Charge on Junction Nodes From Ion Tracks,” IEEE Trans. Nucl. Sci., Vol. NS-29, p. 2024, 1982.