Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for h1gh energy physics electronics

IEEE Transactions on Nuclear Science

Volumn 40, Issue 6, 1993, Pages 1555-1560

  Dentan, M ^a   Delagnes, E ^a   Fourches, N ^a   Rouger, M ^a   Habrard, M C ^b   Blanquart, L ^b   Delpierre, P ^b   Potheau, R ^b   Truche, R ^c   Blanc, J P ^c   Delevoye, E ^c   Gautier, J ^c   Pelloie, J L ^c   de Pontcharra, J ^c   Flament, O ^d   Leray, J L ^d   Martin, J L ^d   Montaron, J ^d   Musseau, O ^d  

^a CEA SACLAY   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c CEA LETI   (France)

^d CEA DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CMOS INTEGRATED CIRCUITS; CONSTRAINT THEORY; ELECTRONIC EQUIPMENT; MICROELECTRONICS; MONOLITHIC INTEGRATED CIRCUITS; PARTICLE ACCELERATORS; RADIATION; VLSI CIRCUITS;

ANALOG DIGITAL TECHNOLOGY; COMPLEMENTARY BIPOLAR TRANSISTOR; COMPLEMENTARY JFETS; COMPLEMENTARY MOS TRANSISTOR; HIGH BEAM LUMINOSITY; LARGE HADRON COLLIDER; RAD-HARD TECHNOLOGY;

RADIATION EFFECTS;

EID: 0027875515     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273505     Document Type: Article

References (9)

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2. G.Stevenson et al, CERN-TIS/RP/92-07 CF.
3. Th.Mouthuy, Radiation dose expected in LHC inner detectors, ATLAS internal note, INDET.NO.12, 22 july 1992.
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9. C.G.Messenger and S.M.Ash, “The Effects of Radiation on Electronic Systems”, Van Nostrand Reinhold Co., New York (1986).