Boron penetration in dual gate process technology: A look at how boron penetration impacts device performance and gate oxide reliability

Semiconductor International

Volumn 21, Issue 1, 1998, Pages 89-98

  Zhou, Zhixu ^a   Schröder, Dieter K ^b  

^a MOTOROLA INC   (United States)

^b Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 30644476025     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (19)

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