IMPACT OF GATE-INDUCED DRAIN LEAKAGE CURRENT ON MOSFET SCALING.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1987, Pages 718-721

  Chan, T Y ^a   Chen, J ^a   Ko, P K ^a   Hu, C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FAULT CURRENTS - LEAKAGE CURRENTS; ELECTRONS - TUNNELING; INTEGRATED CIRCUITS, VLSI;

BAND-TO-BAND TUNNELING; GATE-INDUCED DRAIN LEAKAGE CURRENT; LEAKAGE MECHANISM; MOSFET SCALING; THIN-GATE-OXIDE MOSFETS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023542548     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1987.191531     Document Type: Conference Paper

References (7)