6H-SiC

IEEE Transactions on Electron Devices

Volumn 46, Issue 3, 1999, Pages 465-470

  Junctions, P ^a,b   Ramungul, Nudjarin ^c   Khemka, Vishnu ^d   Zheng, Yingping ^a   Patel, Rupal ^b   Paul Chow, T ^c  

^a IEEE   (Thailand)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c Ministry of Industry   (Thailand)

^d Technology Development Department   (United States)

Author keywords

6H SiC; Beryllium; Ion implantation; Photoluminescence; Rectifier; Sic

Indexed keywords

ACTIVATION ENERGY; BERYLLIUM; ION IMPLANTATION; LEAKAGE CURRENTS; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SILICON CARBIDE; SOLID STATE RECTIFIERS;

ACTIVATION ENERGY EXTRACTION;

SEMICONDUCTOR JUNCTIONS;

EID: 0033099559     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.748863     Document Type: Article

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