4H-SiC Trench MOS Barrier Schottky (TMBS) rectifier

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 165-168

  Khemka, V ^a   Ananthan, V ^a   Chow, T P ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; LEAKAGE CURRENTS; MOS DEVICES; SILICON CARBIDE;

DYNAMIC SWITCHING MEASUREMENTS; TRENCH MOS BARRIER SCHOTTKY RECTIFIERS;

ELECTRIC RECTIFIERS;

EID: 0032598924     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)