Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers

Japanese Journal of Applied Physics

Volumn 31, Issue 9 R, 1992, Pages 2883-2888

  Nakamura, Shuji ^a   Mukai, Takashi ^a   Senoh, Masayuki ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

Buffer layer; Gan; Geh4; Hall measurement; Photoluminescence; Si and Ge doped GaN; Sih4

Indexed keywords

CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; GERMANIUM; HALL EFFECT; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SILICON; SURFACES;

CARRIER CONCENTRATION; GALLIUM NITRIDE BUFFER LAYERS; GERMANIUM HYDROGEN COMPOUNDS; METALORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM NITRIDES; SILICON HYDROGEN COMPOUNDS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0026925404     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.31.2883     Document Type: Article

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