An analytical model of punchthrough voltage of short-channel MOSFETs with nonuniformly doped channels

Solid State Electronics

Volumn 33, Issue 4, 1990, Pages 395-400

  Das Gupta, A ^a   Lahiri, S K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS--DOPING;

BORON IMPLANTATION PROFILES; CHANNEL DOPING CONCENTRATION; DOPED CHANNELS; PUNCHTHROUGH DEPTH; PUNCHTHROUGH VOLTAGE; SHORT-CHANNEL MOSFETS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025411237     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(90)90041-C     Document Type: Article

References (15)

1. VLSI limitations from drain-induced barrier lowering
2. Short-channel MOSFET's in the punchthrough current mode
3. A two-dimensional computer analysis of triode-like characteristics of short-channel MOSFET's
4. Dominant subthreshold conduction paths in short-channel MOSFET's
5. A simple punchthrough model for short-channel MOSFET's
6. Surface conduction in short-channel MOS devices as a limitation to VLSI scaling
7. An accurate large-signal MOS transistor model for use in computer-aided design
8. Subthreshold conduction in MOSFET's
9. Amorphous silicon phototransistor on a glass substrate
10. A new approach to the modeling of nonuniformly doped short-channel MOSFET's
11. A novel analytical threshold voltage model of MOSFETs with implanted channels
12. An analytical threshold voltage model of short-channel MOSFET's with implanted channels
13. A two-dimensional analytical model of threshold voltages of short-channel MOSFETs with Gaussian-doped channels
14. A new boron implantation model suitable for analytical modeling of threshold voltage of MOSFETs