Surface Conduction in Short-Channel MOS Devices as a Limitation to VLSI Scaling

IEEE Transactions on Electron Devices

Volumn 29, Issue 2, 1982, Pages 254-266

  Eitan, Boaz ^a   Frohman Bentchkowsky, Dov ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS - VERY LARGE SCALE INTEGRATION;

SEMICONDUCTOR DEVICES;

EID: 0020091286     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1982.20693     Document Type: Article

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